Citation: T. Story et Jm. Langer, PROCEEDINGS OF THE NAL-SCHOOL-ON-PHYSICS-OF-SEMICONDUCTING-COMPOUNDS,JASZOWIEC POLAND, MAY 27-31 1996 .1. PREFACE, Acta Physica Polonica. A, 90(4), 1996, pp. 3-4
Authors:
SHCHEULIN AS
RYSKIN AI
SWIATEK K
LANGER JM
Citation: As. Shcheulin et al., DEEP-SHALLOW TRANSFORMATION OF BISTABLE CENTERS IN SEMICONDUCTING CDF2 CRYSTALS, Physics letters. A, 222(1-2), 1996, pp. 107-112
Authors:
MOCHIZUKI Y
ISHII T
MIZUTA M
MOCHIZUKI A
LANGER JM
Citation: Y. Mochizuki et al., MECHANISMS OF IMPURITY DEACTIVATION IN GAAS DURING REACTIVE ION ETCHING, Physical review letters, 77(17), 1996, pp. 3601-3604
Citation: Ai. Ryskin et Jm. Langer, RELAXATION OF THE LATTICE DUE TO PHOTOIONIZATION OF DIFFERENT DEEP IMPURITIES, Semiconductors, 27(8), 1993, pp. 756-757
Citation: L. Dobaczewski et al., PRESSURE-DEPENDENCE OF THE SCHOTTKY-BARRIER HEIGHTS IN AL ALGAAS JUNCTIONS/, Acta Physica Polonica. A, 84(4), 1993, pp. 741-744
Citation: R. Buczko et Jm. Langer, IMPURITY WAVE-FUNCTION AND ALLOY BROADENING OF IMPURITY-RELATED LUMINESCENCE, Acta Physica Polonica. A, 84(3), 1993, pp. 591-594
Citation: P. Revva et al., TEMPERATURE-DEPENDENCE OF THE SCHOTTKY-BARRIER IN AL ALGAAS METAL-SEMICONDUCTOR JUNCTIONS/, Journal of applied physics, 74(1), 1993, pp. 416-425
Citation: L. Dobaczewski et al., INFLUENCE OF ELECTRIC-FIELD ON ELECTRON-EMISSION FROM DX(TE) CENTERS IN AL0.55GA0.45AS, Semiconductor science and technology, 6(8), 1991, pp. 752-755