Authors:
BERTRU N
NOUAOURA M
BONNET J
LASSABATERE L
BEDEL E
MAMY M
Citation: N. Bertru et al., PREPARATION OF GASB(100) SURFACES BY ULTRAVIOLET-IRRADIATION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(4), 1997, pp. 2043-2050
Authors:
NOUAOURA M
DASILVA FWO
BERTRU N
ROUANET M
TAHRAOUI A
OUEINI W
BONNET J
LASSABATERE L
Citation: M. Nouaoura et al., MODIFICATION OF GASB(100) SURFACES INDUCED BY ANNEALING UNDER VACUUM AND UNDER SB-4 AND AS-4 FLUX, Journal of crystal growth, 172(1-2), 1997, pp. 37-43
Authors:
FERHAT M
LIAUTARD B
BRUN G
TEDENAC JC
NOUAOURA M
LASSABATERE L
Citation: M. Ferhat et al., COMPARATIVE-STUDIES BETWEEN THE GROWTH-CHARACTERISTICS OF BI2TE3 THIN-FILMS DEPOSITED ON SIO2, SI(100) AND SI(111), Journal of crystal growth, 167(1-2), 1996, pp. 122-128
Authors:
BERTRU N
NOUAOURA M
BONNET J
LASSABATERE L
Citation: N. Bertru et al., GASB MOLECULAR-BEAM EPITAXY GROWTH ON VICINAL SURFACES STUDIED BY RHEED, Journal of crystal growth, 160(1-2), 1996, pp. 1-6
Authors:
ROUANET M
OUEINI W
NOUAOURA M
BERTRU N
BONNET J
LASSABATERE L
Citation: M. Rouanet et al., STUDY OF THE EFFECT OF DEPOSITION OR ANNE ALING TEMPERATURE ON THE AUGASB(100) INTERFACE FORMATION BY LOW-ENERGY-ELECTRON DIFFRACTION AND AUGER OR ELECTRON LOSS SPECTROSCOPIES/, Journal de physique. III, 5(5), 1995, pp. 483-493
Authors:
NOUAOURA M
LASSABATERE L
BERTRU N
BONNET J
ISMAIL A
Citation: M. Nouaoura et al., PROBLEMS RELEVANT TO THE USE OF OPTICAL PYROMETERS FOR SUBSTRATE-TEMPERATURE MEASUREMENTS AND CONTROLS IN MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(1), 1995, pp. 83-87
Citation: A. Ismail et al., SCHOTTKY DIODE PROPERTIES OF AU, IN-GAP(111) AND IN-GAP(110) CHEMICALLY ETCHED SURFACES, Solid-state electronics, 38(2), 1995, pp. 497-501
Authors:
BERTRU N
NOUAOURA M
BONNET J
LASSABATERE L
Citation: N. Bertru et al., REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY MODIFICATIONS INDUCED BY ANTIMONY FLUX INTERRUPTION DURING GASB GROWTH BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 156(4), 1995, pp. 327-332
Authors:
KANG JM
NOUAOURA M
LASSABATERE L
ROCHER A
Citation: Jm. Kang et al., ACCOMMODATION OF LATTICE MISMATCH AND THREADING OF DISLOCATIONS IN GASB FILMS GROWN AT DIFFERENT TEMPERATURES ON GAAS(001), Journal of crystal growth, 143(3-4), 1994, pp. 115-123