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Results: 1-11 |
Results: 11
PREPARATION OF GASB(100) SURFACES BY ULTRAVIOLET-IRRADIATION
Authors: BERTRU N NOUAOURA M BONNET J LASSABATERE L BEDEL E MAMY M
Citation: N. Bertru et al., PREPARATION OF GASB(100) SURFACES BY ULTRAVIOLET-IRRADIATION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(4), 1997, pp. 2043-2050
MODIFICATION OF GASB(100) SURFACES INDUCED BY ANNEALING UNDER VACUUM AND UNDER SB-4 AND AS-4 FLUX
Authors: NOUAOURA M DASILVA FWO BERTRU N ROUANET M TAHRAOUI A OUEINI W BONNET J LASSABATERE L
Citation: M. Nouaoura et al., MODIFICATION OF GASB(100) SURFACES INDUCED BY ANNEALING UNDER VACUUM AND UNDER SB-4 AND AS-4 FLUX, Journal of crystal growth, 172(1-2), 1997, pp. 37-43
COMPARATIVE-STUDIES BETWEEN THE GROWTH-CHARACTERISTICS OF BI2TE3 THIN-FILMS DEPOSITED ON SIO2, SI(100) AND SI(111)
Authors: FERHAT M LIAUTARD B BRUN G TEDENAC JC NOUAOURA M LASSABATERE L
Citation: M. Ferhat et al., COMPARATIVE-STUDIES BETWEEN THE GROWTH-CHARACTERISTICS OF BI2TE3 THIN-FILMS DEPOSITED ON SIO2, SI(100) AND SI(111), Journal of crystal growth, 167(1-2), 1996, pp. 122-128
GASB MOLECULAR-BEAM EPITAXY GROWTH ON VICINAL SURFACES STUDIED BY RHEED
Authors: BERTRU N NOUAOURA M BONNET J LASSABATERE L
Citation: N. Bertru et al., GASB MOLECULAR-BEAM EPITAXY GROWTH ON VICINAL SURFACES STUDIED BY RHEED, Journal of crystal growth, 160(1-2), 1996, pp. 1-6
STUDY OF THE EFFECT OF DEPOSITION OR ANNE ALING TEMPERATURE ON THE AUGASB(100) INTERFACE FORMATION BY LOW-ENERGY-ELECTRON DIFFRACTION AND AUGER OR ELECTRON LOSS SPECTROSCOPIES/
Authors: ROUANET M OUEINI W NOUAOURA M BERTRU N BONNET J LASSABATERE L
Citation: M. Rouanet et al., STUDY OF THE EFFECT OF DEPOSITION OR ANNE ALING TEMPERATURE ON THE AUGASB(100) INTERFACE FORMATION BY LOW-ENERGY-ELECTRON DIFFRACTION AND AUGER OR ELECTRON LOSS SPECTROSCOPIES/, Journal de physique. III, 5(5), 1995, pp. 483-493
PROBLEMS RELEVANT TO THE USE OF OPTICAL PYROMETERS FOR SUBSTRATE-TEMPERATURE MEASUREMENTS AND CONTROLS IN MOLECULAR-BEAM EPITAXY
Authors: NOUAOURA M LASSABATERE L BERTRU N BONNET J ISMAIL A
Citation: M. Nouaoura et al., PROBLEMS RELEVANT TO THE USE OF OPTICAL PYROMETERS FOR SUBSTRATE-TEMPERATURE MEASUREMENTS AND CONTROLS IN MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(1), 1995, pp. 83-87
SCHOTTKY DIODE PROPERTIES OF AU, IN-GAP(111) AND IN-GAP(110) CHEMICALLY ETCHED SURFACES
Authors: ISMAIL A BOUMEDIENNE M LASSABATERE L
Citation: A. Ismail et al., SCHOTTKY DIODE PROPERTIES OF AU, IN-GAP(111) AND IN-GAP(110) CHEMICALLY ETCHED SURFACES, Solid-state electronics, 38(2), 1995, pp. 497-501
REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY MODIFICATIONS INDUCED BY ANTIMONY FLUX INTERRUPTION DURING GASB GROWTH BY MOLECULAR-BEAM EPITAXY
Authors: BERTRU N NOUAOURA M BONNET J LASSABATERE L
Citation: N. Bertru et al., REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY MODIFICATIONS INDUCED BY ANTIMONY FLUX INTERRUPTION DURING GASB GROWTH BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 156(4), 1995, pp. 327-332
UV-O(3) PREPARATION OF INAS (100) SURFACES PRIOR TO MBE GROWTH
Authors: BERTRU N BACQUET Y NOUAOURA M LASSABATERE L
Citation: N. Bertru et al., UV-O(3) PREPARATION OF INAS (100) SURFACES PRIOR TO MBE GROWTH, Applied surface science, 74(4), 1994, pp. 331-336
ACCOMMODATION OF LATTICE MISMATCH AND THREADING OF DISLOCATIONS IN GASB FILMS GROWN AT DIFFERENT TEMPERATURES ON GAAS(001)
Authors: KANG JM NOUAOURA M LASSABATERE L ROCHER A
Citation: Jm. Kang et al., ACCOMMODATION OF LATTICE MISMATCH AND THREADING OF DISLOCATIONS IN GASB FILMS GROWN AT DIFFERENT TEMPERATURES ON GAAS(001), Journal of crystal growth, 143(3-4), 1994, pp. 115-123
UV AND OZONE CLEANING OF GASB (100) SURFACES PRIOR TO MBE GROWTH
Authors: BERTRU N NOUAOURA M BONNET J LASSABATERE L BEDEL E MUNOZYAGUE A
Citation: N. Bertru et al., UV AND OZONE CLEANING OF GASB (100) SURFACES PRIOR TO MBE GROWTH, Applied surface science, 68(3), 1993, pp. 357-359
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