Authors:
LAU WM
HUANG LJ
CHANG WH
BELLO I
ABRAHAM T
KING M
Citation: Wm. Lau et al., NANOMETER P-N-JUNCTION FORMATION AND CHARACTERIZATION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1134-1138
Citation: I. Bello et al., IMPORTANCE OF THE MOLECULAR IDENTITY OF ION SPECIES IN REACTIVE ION ETCHING AT LOW ENERGIES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1425-1430
Authors:
BRUCE T
HUANG LJ
BELLO I
LAU WM
PANCHHI P
STRNAD V
HIGH M
Citation: T. Bruce et al., INTERFACIAL REACTIONS OF ION-BEAM DEPOSITED AC FILMS ON ZNS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1487-1490
Authors:
LANDHEER D
LU ZH
BARIBEAU JM
HUANG LJ
LAU WM
Citation: D. Landheer et al., CAPACITANCE-VOLTAGE CHARACTERISTICS OF METAL-INSULATOR-SEMICONDUCTOR DIODES WITH S-PASSIVATION AND SI INTERFACE CONTROL LAYERS ON GAAS AND INP, Journal of electronic materials, 23(9), 1994, pp. 943-952
Authors:
HUANG LJ
BELO I
LAU WM
LEE ST
STEVENS PA
DEVRIES BD
Citation: Lj. Huang et al., SYNCHROTRON-RADIATION X-RAY-ABSORPTION OF ION-BOMBARDMENT INDUCED DEFECTS ON DIAMOND(100), Journal of applied physics, 76(11), 1994, pp. 7483-7486
Citation: Wm. Lau et al., MODIFICATION OF SURFACE BAND BENDING OF DIAMOND BY LOW-ENERGY ARGON AND CARBON ION-BOMBARDMENT, Journal of applied physics, 75(7), 1994, pp. 3385-3391
Authors:
LANDHEER D
YOUSEFI GH
WEBB JB
KWOK RWM
LAU WM
Citation: D. Landheer et al., DEEP-LEVEL TRANSIENT SPECTROSCOPY OF HF-CLEANED AND SULFUR-PASSIVATEDINP METAL NITRIDE SEMICONDUCTOR STRUCTURES, Journal of applied physics, 75(7), 1994, pp. 3516-3521
Citation: I. Bello et al., MECHANISM OF CLEANING AND ETCHING SI SURFACES WITH LOW-ENERGY CHLORINE ION-BOMBARDMENT, Journal of applied physics, 75(6), 1994, pp. 3092-3097
Authors:
CHANG WH
HUANG LJ
LAU WM
ABRAHAM T
KING M
Citation: Wh. Chang et al., STUDY OF REACTIVE-ION-ETCHED SILICON BY A NOVEL ULTRASHALLOW DEPTH PROFILING TECHNIQUE, Applied physics letters, 64(16), 1994, pp. 2154-2156
Citation: Rwm. Kwok et al., SURFACE-CHARGE SPECTROSCOPY - A NOVEL SURFACE SCIENCE TECHNIQUE FOR MEASURING SURFACE-STATE DISTRIBUTIONS ON SEMICONDUCTORS, Journal of electronic materials, 22(9), 1993, pp. 1141-1146
Citation: Wm. Lau, PROTECTION BY TACRINE AND SOME ADJUNCTS AGAINST THE DEPRESSANT EFFECTS OF SOMAN IN GUINEA-PIG ATRIUM, General pharmacology, 24(6), 1993, pp. 1513-1519
Citation: I. Bello et al., STUDIES OF REACTIVE ION ETCHING USING COLUTRON HOT-FILAMENT DC PLASMAION SOURCES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 1002-1005
Authors:
LAU WM
HUANG LJ
CHANG WH
VOS M
MITCHELL IV
Citation: Wm. Lau et al., ULTRASHALLOW DEPTH PROFILING USING OZONE OXIDATION AND HF ETCHING OF SILICON, Applied physics letters, 63(1), 1993, pp. 78-80
Authors:
LANDHEER D
BARDWELL JA
SPROULE I
SCOTTTHOMAS J
KWOK W
LAU WM
Citation: D. Landheer et al., REDUCED INTERFACE STATE DENSITIES FOR REMOTE MICROWAVE PLASMA SILICON-NITRIDE, Canadian journal of physics, 70(10-11), 1992, pp. 795-798