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Results: 1-25 | 26-43
Results: 1-25/43
VERY-LOW CONTRAST X-RAY MASKS FOR HIGH-RESOLUTION PRINTING
Authors: CHEN Y SIMON G HAGHIRIGOSNET AM MANIN L LAUNOIS H
Citation: Y. Chen et al., VERY-LOW CONTRAST X-RAY MASKS FOR HIGH-RESOLUTION PRINTING, Microelectronic engineering, 42, 1998, pp. 275-278
ABSORBER EDGE EFFECT IN PROXIMITY X-RAY-LITHOGRAPHY
Authors: SIMON G CHEN Y HAGHIRIGOSNET AM DECANINI D BOURNEIX J ROUSSEAUX F LAUNOIS H
Citation: G. Simon et al., ABSORBER EDGE EFFECT IN PROXIMITY X-RAY-LITHOGRAPHY, Microelectronic engineering, 42, 1998, pp. 297-300
COULOMB-BLOCKADE EFFECT THROUGH A 2D ORDERED ARRAY OF PD ISLANDS OBTAINED BY COLLOIDAL DEPOSITION
Authors: LEBRETON C VIEU C PEPIN A MEJIAS M CARCENAC F JIN Y LAUNOIS H
Citation: C. Lebreton et al., COULOMB-BLOCKADE EFFECT THROUGH A 2D ORDERED ARRAY OF PD ISLANDS OBTAINED BY COLLOIDAL DEPOSITION, Microelectronic engineering, 42, 1998, pp. 507-510
FABRICATION OF COULOMB-BLOCKADE DEVICES BY COMBINATION OF HIGH-RESOLUTION ELECTRON-BEAM LITHOGRAPHY AND DEPOSITION OF GRANULAR FILMS
Authors: MEJIAS M LEBRETON C VIEU C PEPIN A CARCENAC F LAUNOIS H BOERO M
Citation: M. Mejias et al., FABRICATION OF COULOMB-BLOCKADE DEVICES BY COMBINATION OF HIGH-RESOLUTION ELECTRON-BEAM LITHOGRAPHY AND DEPOSITION OF GRANULAR FILMS, Microelectronic engineering, 42, 1998, pp. 563-566
DYNAMICS OF THE MAGNETIZATION REVERSAL IN AU CO/AU MICROMETER-SIZE DOT ARRAYS/
Authors: JAMET JP LEMERLE S MEYER P FERRE J BARTENLIAN B BARDOU N CHAPPERT C VEILLET P ROUSSEAUX F DECANINI D LAUNOIS H
Citation: Jp. Jamet et al., DYNAMICS OF THE MAGNETIZATION REVERSAL IN AU CO/AU MICROMETER-SIZE DOT ARRAYS/, Physical review. B, Condensed matter, 57(22), 1998, pp. 14320-14331
HIGH-EFFICIENCY SUBWAVELENGTH DIFFRACTIVE ELEMENT PATTERNED IN A HIGH-REFRACTIVE-INDEX MATERIAL FOR 633-NM
Authors: ASTILEAN S LALANNE P CHAVEL P CAMBRIL E LAUNOIS H
Citation: S. Astilean et al., HIGH-EFFICIENCY SUBWAVELENGTH DIFFRACTIVE ELEMENT PATTERNED IN A HIGH-REFRACTIVE-INDEX MATERIAL FOR 633-NM, Optics letters, 23(7), 1998, pp. 552-554
BLAZED BINARY SUBWAVELENGTH GRATINGS WITH EFFICIENCIES LARGER THAN THOSE OF CONVENTIONAL ECHELETTE GRATINGS
Authors: LALANNE P ASTILEAN S CHAVEL P CAMBRIL E LAUNOIS H
Citation: P. Lalanne et al., BLAZED BINARY SUBWAVELENGTH GRATINGS WITH EFFICIENCIES LARGER THAN THOSE OF CONVENTIONAL ECHELETTE GRATINGS, Optics letters, 23(14), 1998, pp. 1081-1083
PLANAR PATTERNED MAGNETIC MEDIA OBTAINED BY ION IRRADIATION
Authors: CHAPPERT C BERNAS H FERRE J KOTTLER V JAMET JP CHEN Y CAMBRIL E DEVOLDER T ROUSSEAUX F MATHET V LAUNOIS H
Citation: C. Chappert et al., PLANAR PATTERNED MAGNETIC MEDIA OBTAINED BY ION IRRADIATION, Science, 280(5371), 1998, pp. 1919-1922
ELECTRON-TRANSPORT IN METALLIC DOT ARRAYS - EFFECT OF A BROAD DISPERSION IN THE TUNNEL JUNCTION DIMENSIONS
Authors: CORDAN AS GOLTZENE A HERVE Y MEJIAS M VIEU C LAUNOIS H
Citation: As. Cordan et al., ELECTRON-TRANSPORT IN METALLIC DOT ARRAYS - EFFECT OF A BROAD DISPERSION IN THE TUNNEL JUNCTION DIMENSIONS, Journal of applied physics, 84(7), 1998, pp. 3756-3763
MAGNETIZATION REVERSAL IN (CONI PT)(6) DOTS CONNECTED TO A LARGE-AREATHROUGH SUBMICRON WIDE CHANNELS/
Authors: FOURNEL F CHEN Y CARCENAC F ESSAIDI N LAUNOIS H
Citation: F. Fournel et al., MAGNETIZATION REVERSAL IN (CONI PT)(6) DOTS CONNECTED TO A LARGE-AREATHROUGH SUBMICRON WIDE CHANNELS/, IEEE transactions on magnetics, 34(4), 1998, pp. 1027-1029
OPTIMIZATION OF EXPERIMENTAL OPERATING PARAMETERS FOR VERY HIGH-RESOLUTION FOCUSED ION-BEAM APPLICATIONS
Authors: GIERAK J VIEU C SCHNEIDER M LAUNOIS H BENASSAYAG G SEPTIER A
Citation: J. Gierak et al., OPTIMIZATION OF EXPERIMENTAL OPERATING PARAMETERS FOR VERY HIGH-RESOLUTION FOCUSED ION-BEAM APPLICATIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2373-2378
SUB-20 NM X-RAY NANOLITHOGRAPHY USING CONVENTIONAL MASK TECHNOLOGIES ON MONOCHROMATIZED SYNCHROTRON-RADIATION
Authors: SIMON G HAGHIRIGOSNET AM BOURNEIX J DECANINI D CHEN Y ROUSSEAUX F LAUNOIS H VIDAL B
Citation: G. Simon et al., SUB-20 NM X-RAY NANOLITHOGRAPHY USING CONVENTIONAL MASK TECHNOLOGIES ON MONOCHROMATIZED SYNCHROTRON-RADIATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2489-2494
EVIDENCE OF STRESS DEPENDENCE IN SIO2 SI3N4 ENCAPSULATION-BASED LAYERDISORDERING OF GAAS/ALGAAS QUANTUM-WELL HETEROSTRUCTURES/
Authors: PEPIN A VIEU C SCHNEIDER M LAUNOIS H NISSIM Y
Citation: A. Pepin et al., EVIDENCE OF STRESS DEPENDENCE IN SIO2 SI3N4 ENCAPSULATION-BASED LAYERDISORDERING OF GAAS/ALGAAS QUANTUM-WELL HETEROSTRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(1), 1997, pp. 142-153
FABRICATION OF 2-DIMENSIONAL PHOTONIC LATTICES IN GAAS - THE REGULAR GRAPHITE STRUCTURES
Authors: CHEN Y FAINI G LAUNOIS H ETRILLARD J
Citation: Y. Chen et al., FABRICATION OF 2-DIMENSIONAL PHOTONIC LATTICES IN GAAS - THE REGULAR GRAPHITE STRUCTURES, Superlattices and microstructures, 22(1), 1997, pp. 109-113
ELECTROPLATING - AN ALTERNATIVE TRANSFER TECHNOLOGY IN THE 20NM RANGE
Authors: SIMON G HAGHIRIGOSNET AM CARCENAC F LAUNOIS H
Citation: G. Simon et al., ELECTROPLATING - AN ALTERNATIVE TRANSFER TECHNOLOGY IN THE 20NM RANGE, Microelectronic engineering, 35(1-4), 1997, pp. 51-54
SUB-10-NM MONOGRANULAR METALLIC LINES FORMED BY 200-KV ELECTRON-BEAM LITHOGRAPHY AND LIFT-OFF IN POLYMETHYLMETHACRYLATE RESIST
Authors: VIEU C MEJIAS M CARCENAC F FAINI G LAUNOIS H
Citation: C. Vieu et al., SUB-10-NM MONOGRANULAR METALLIC LINES FORMED BY 200-KV ELECTRON-BEAM LITHOGRAPHY AND LIFT-OFF IN POLYMETHYLMETHACRYLATE RESIST, Microelectronic engineering, 35(1-4), 1997, pp. 253-256
GOLD NANOGRAINS DEPOSITED FROM A LIQUID-METAL ION-SOURCE
Authors: VIEU C GIERAK J DAVID C LAGADEC Y BOURLANGE A LARIGALDIE D WANG Z FLICSTEIN J LAUNOIS H
Citation: C. Vieu et al., GOLD NANOGRAINS DEPOSITED FROM A LIQUID-METAL ION-SOURCE, Microelectronic engineering, 35(1-4), 1997, pp. 349-352
FOCUSED ION-BEAM NANOLITHOGRAPHY ON ALF3 AT A 10 NM SCALE
Authors: GIERAK J VIEU C LAUNOIS H BENASSAYAG G SEPTIER A
Citation: J. Gierak et al., FOCUSED ION-BEAM NANOLITHOGRAPHY ON ALF3 AT A 10 NM SCALE, Applied physics letters, 70(15), 1997, pp. 2049-2051
HIGH-VOLTAGE ELECTRON-BEAM NANOLITHOGRAPHY ON WO3
Authors: CARCENAC F VIEU C HAGHIRIGOSNET AM SIMON G MEJIAS M LAUNOIS H
Citation: F. Carcenac et al., HIGH-VOLTAGE ELECTRON-BEAM NANOLITHOGRAPHY ON WO3, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 4283-4287
PROXIMITY X-RAY-LITHOGRAPHY AS A QUICK REPLICATION TECHNIQUE IN NANOFABRICATION - RECENT PROGRESS AND PERSPECTIVES
Authors: CHEN Y ROUSSEAUX F HAGHIRIGOSNET AM KUPKA RK RAVET MF SIMON G LAUNOIS H
Citation: Y. Chen et al., PROXIMITY X-RAY-LITHOGRAPHY AS A QUICK REPLICATION TECHNIQUE IN NANOFABRICATION - RECENT PROGRESS AND PERSPECTIVES, Microelectronic engineering, 30(1-4), 1996, pp. 191-194
NOVEL NANOFABRICATION METHOD OF HIGH-TEMPERATURE METALLIC COULOMB-BLOCKADE DEVICES
Authors: VIEU C MEJIAS M CARCENAC F FAINI G LAUNOIS H
Citation: C. Vieu et al., NOVEL NANOFABRICATION METHOD OF HIGH-TEMPERATURE METALLIC COULOMB-BLOCKADE DEVICES, Microelectronic engineering, 30(1-4), 1996, pp. 403-406
NANOFABRICATION WITH A FULL CONTROL OF THE ELECTRODES AND QUANTUM-WELL DIMENSIONALITIES - 3D-0D RESONANT-TUNNELING THROUGH QUANTUM BOXES
Authors: FAINI G VIEU C LARUELLE F LAUNOIS H KRAUZ P BEDEL E FONTAINE C MUNOZYAGUE A
Citation: G. Faini et al., NANOFABRICATION WITH A FULL CONTROL OF THE ELECTRODES AND QUANTUM-WELL DIMENSIONALITIES - 3D-0D RESONANT-TUNNELING THROUGH QUANTUM BOXES, Microelectronic engineering, 30(1-4), 1996, pp. 479-482
SYNTHESIS OF A SUBWAVELENGTH-PULSE-WIDTH SPATIALLY MODULATED ARRAY ILLUMINATOR FOR 0.633-MU-M
Authors: MILLER JM DEBEAUCOUDREY N CHAVEL P CAMBRIL E LAUNOIS H
Citation: Jm. Miller et al., SYNTHESIS OF A SUBWAVELENGTH-PULSE-WIDTH SPATIALLY MODULATED ARRAY ILLUMINATOR FOR 0.633-MU-M, Optics letters, 21(17), 1996, pp. 1399-1401
CHARACTERISTICS OF GAAS ALGAAS HEMTS FABRICATED BY X-RAY-LITHOGRAPHY/
Authors: LAFONTAINE H HAGHIRIGOSNET AM JIN Y CROZAT P ADDE R CHAKER M PEPIN H ROUSSEAUX F LAUNOIS H
Citation: H. Lafontaine et al., CHARACTERISTICS OF GAAS ALGAAS HEMTS FABRICATED BY X-RAY-LITHOGRAPHY/, I.E.E.E. transactions on electron devices, 43(1), 1996, pp. 175-178
GAAS ALGAAS QUANTUM WIRES FABRICATED BY SIO2 CAPPING-INDUCED INTERMIXING/
Authors: PEPIN A VIEU C SCHNEIDER M PLANEL R BLOCH J BENASSAYAG G LAUNOIS H MARZIN JY NISSIM Y
Citation: A. Pepin et al., GAAS ALGAAS QUANTUM WIRES FABRICATED BY SIO2 CAPPING-INDUCED INTERMIXING/, Applied physics letters, 69(1), 1996, pp. 61-63
Risultati: 1-25 | 26-43