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Results: 1-25/37
Authors:
JALAL SM
LAW ME
CARLSON RO
DEWALD GW
Citation: Sm. Jalal et al., PRENATAL DETECTION OF ANEUPLOIDY BY DIRECTLY LABELED MULTICOLORED PROBES AND INTERPHASE FLUORESCENCE IN-SITU HYBRIDIZATION, Mayo Clinic proceedings, 73(2), 1998, pp. 132-137
Authors:
LAW ME
HADDARA YM
JONES KS
Citation: Me. Law et al., EFFECT OF THE SILICON OXIDE INTERFACE ON INTERSTITIALS - DI-INTERSTITIAL RECOMBINATION/, Journal of applied physics, 84(7), 1998, pp. 3555-3560
Authors:
CHUANG MY
LAW ME
O KK
Citation: My. Chuang et al., 3-DIMENSIONAL BASE DISTRIBUTED EFFECTS OF LONG STRIPE BJTS - AC EFFECTS ON INPUT CHARACTERISTICS, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 1993-2001
Authors:
CHUANG MY
LAW ME
O K
Citation: My. Chuang et al., 3-DIMENSIONAL BASE DISTRIBUTED EFFECTS OF LONG STRIPE BJT - BASE RESISTANCE AT DC, I.E.E.E. transactions on electron devices, 45(2), 1998, pp. 439-446
Authors:
BABOVICVUKSANOVIC D
MICHELS VV
LAW ME
LINDOR NM
JALAL SM
Citation: D. Babovicvuksanovic et al., MATERNAL CELL CONTAMINATION OF BUCCAL SMEAR SAMPLES IN NURSING NEONATES, Clinical genetics, 53(2), 1998, pp. 114-118
Authors:
MOLLER K
JONES KS
LAW ME
Citation: K. Moller et al., CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY ANALYSIS OF (311) DEFECTS FROM SI IMPLANTATION INTO SILICON, Applied physics letters, 72(20), 1998, pp. 2547-2549
Authors:
JALAL SM
LAW ME
Citation: Sm. Jalal et Me. Law, DETECTION OF NEWBORN ANEUPLOIDY BY INTERPHASE FLUORESCENCE IN-SITU HYBRIDIZATION, Mayo Clinic proceedings, 72(8), 1997, pp. 705-710
Authors:
CHAUDHRY S
LAW ME
Citation: S. Chaudhry et Me. Law, THE STRESS ASSISTED EVOLUTION OF POINT AND EXTENDED DEFECTS IN SILICON, Journal of applied physics, 82(3), 1997, pp. 1138-1146
Authors:
LIU J
KRISHNAMOORTHY V
GOSSMAN HJ
RUBIN L
LAW ME
JONES KS
Citation: J. Liu et al., THE EFFECT OF BORON IMPLANT ENERGY ON TRANSIENT ENHANCED DIFFUSION INSILICON, Journal of applied physics, 81(4), 1997, pp. 1656-1660
Authors:
CHASON E
PICRAUX ST
POATE JM
BORLAND JO
CURRENT MI
DELARUBIA TD
EAGLESHAM DJ
HOLLAND OW
LAW ME
MAGEE CW
MAYER JW
MELNGAILIS J
TASCH AF
Citation: E. Chason et al., ION-BEAMS IN SILICON PROCESSING AND CHARACTERIZATION, Journal of applied physics, 81(10), 1997, pp. 6513-6561
Authors:
XU JW
KRISHNAMOORTHY V
JONES KS
LAW ME
Citation: Jw. Xu et al., A COMPARISON OF BORON AND PHOSPHORUS DIFFUSION AND DISLOCATION LOOP GROWTH FROM SILICON IMPLANTS INTO SILICON, Journal of applied physics, 81(1), 1997, pp. 107-111
Authors:
CHUANG MY
LAW ME
Citation: My. Chuang et Me. Law, A NEW ALGORITHM FOR FASTER FULL-THERMODYNAMIC DEVICE SIMULATIONS, I.E.E.E. transactions on electron devices, 44(9), 1997, pp. 1567-1570
Authors:
ROBERTSON LS
LILAK A
LAW ME
JONES KS
KRINGHOJ PS
RUBIN LM
JACKSON J
SIMONS DS
CHI P
Citation: Ls. Robertson et al., THE EFFECT OF DOSE-RATE ON INTERSTITIAL RELEASE FROM THE END-OF-RANGEIMPLANT DAMAGE REGION IN SILICON, Applied physics letters, 71(21), 1997, pp. 3105-3107
Authors:
BABOVICVUKSANOVIC D
MICHELS VV
LAW ME
LINDOR NM
JALAL SM
Citation: D. Babovicvuksanovic et al., MATERNAL CELL CONTAMINATION OF BUCCAL SMEAR SAMPLES IN NURSING NEONATES, American journal of human genetics, 61(4), 1997, pp. 665-665
Authors:
LAW ME
Citation: Me. Law, TECHNOLOGY COMPUTER-AIDED-DESIGN CHARACTERIZATION NEEDS AND REQUIREMENTS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 213-217
Authors:
LIN CC
LAW ME
Citation: Cc. Lin et Me. Law, 2-D MESH ADAPTION AND FLUX DISCRETIZATIONS FOR DOPANT DIFFUSION MODELING, IEEE transactions on computer-aided design of integrated circuits and systems, 15(2), 1996, pp. 194-207
Authors:
LAW ME
Citation: Me. Law, THE VIRTUAL IC FACTORY - CAN IT BE ACHIEVED, IEEE circuits and devices magazine, 11(2), 1995, pp. 25-31
Authors:
LAW ME
Citation: Me. Law, PROCESS MODELING - FOREWORD, IEEE transactions on semiconductor manufacturing, 8(4), 1995, pp. 381-381
Authors:
LAW ME
Citation: Me. Law, GRID ADAPTION NEAR MOVING BOUNDARIES IN 2 DIMENSIONS FOR IC PROCESS SIMULATION, IEEE transactions on computer-aided design of integrated circuits and systems, 14(10), 1995, pp. 1223-1230
Authors:
JONES KS
ROBINSON HG
LISTEBARGER J
CHEN J
LIU J
HERNER B
PARK H
LAW ME
SIELOFF D
SLINKMAN JA
Citation: Ks. Jones et al., STUDIES OF POINT-DEFECT DISLOCATION LOOP INTERACTION PROCESSES IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 196-201
Authors:
LIU J
LAW ME
JONES KS
Citation: J. Liu et al., EVOLUTION OF DISLOCATION LOOPS IN SILICON IN AN INERT AMBIENT .1., Solid-state electronics, 38(7), 1995, pp. 1305-1312
Authors:
CHAUDHRY S
LIU J
JONES KS
LAW ME
Citation: S. Chaudhry et al., EVOLUTION OF DISLOCATION LOOPS IN SILICON IN AN INERT AMBIENT .2., Solid-state electronics, 38(7), 1995, pp. 1313-1319
Authors:
PARK H
JONES KS
SLINKMAN JA
LAW ME
Citation: H. Park et al., EFFECTS OF HYDROSTATIC-PRESSURE ON DOPANT DIFFUSION IN SILICON, Journal of applied physics, 78(6), 1995, pp. 3664-3670
Authors:
LISTEBARGER JK
ROBINSON HG
JONES KS
LAW ME
SIELOFF DD
SLINKMAN JA
SEDGWICK TO
Citation: Jk. Listebarger et al., STUDY OF END-OF-RANGE LOOP INTERACTIONS WITH B-DOPED DIFFUSION LAYER(IMPLANT DAMAGE USING A BORON), Journal of applied physics, 78(4), 1995, pp. 2298-2302
Authors:
DOKUMACI O
ROUSSEAU P
LUNING S
KRISHNAMOORTHY V
JONES KS
LAW ME
Citation: O. Dokumaci et al., TRANSMISSION ELECTRON-MICROSCOPY ANALYSIS OF HEAVILY AS-DOPED, LASER,AND THERMALLY ANNEALED LAYERS IN SILICON, Journal of applied physics, 78(2), 1995, pp. 828-831