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Results: 1-11 |
Results: 11
INTEGRATED OPTOELECTRONIC UNIT BASED ON POROUS SILICON
Authors: LAZAROUK S JAGUIRO P BORISENKO V
Citation: S. Lazarouk et al., INTEGRATED OPTOELECTRONIC UNIT BASED ON POROUS SILICON, Physica status solidi. a, Applied research, 165(1), 1998, pp. 87-90
VISUAL DETERMINATION OF THICKNESS AND POROSITY OF POROUS SILICON LAYERS
Authors: LAZAROUK S JAGUIRO P KATSOUBA S MAIELLO G LAMONICA S MASINI G PROVERBIO E FERRARI A
Citation: S. Lazarouk et al., VISUAL DETERMINATION OF THICKNESS AND POROSITY OF POROUS SILICON LAYERS, Thin solid films, 297(1-2), 1997, pp. 97-101
PROGRESS IN THE FIELD OF INTEGRATED OPTOELECTRONICS BASED ON POROUS SILICON
Authors: LAMONICA S MAIELLO G FERRARI A MASINI G LAZAROUK S JAGUIRO P KATSOUBA S
Citation: S. Lamonica et al., PROGRESS IN THE FIELD OF INTEGRATED OPTOELECTRONICS BASED ON POROUS SILICON, Thin solid films, 297(1-2), 1997, pp. 265-267
WHITE-LIGHT EMISSION FROM POROUS-SILICON-ALUMINUM SCHOTTKY JUNCTIONS
Authors: MASINI G LAMONICA S MAIELLO G LAZAROUK S BONDARENKO V
Citation: G. Masini et al., WHITE-LIGHT EMISSION FROM POROUS-SILICON-ALUMINUM SCHOTTKY JUNCTIONS, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 18(10), 1996, pp. 1205-1212
VISIBLE-LIGHT FROM ALUMINUM-POROUS SILICON SCHOTTKY JUNCTIONS
Authors: LAZAROUK S JAGUIRO P KATSOUBA S LAMONICA S MAIELLO G MASINI G FERRARI A
Citation: S. Lazarouk et al., VISIBLE-LIGHT FROM ALUMINUM-POROUS SILICON SCHOTTKY JUNCTIONS, Thin solid films, 276(1-2), 1996, pp. 168-170
ELECTROLUMINESCENCE FROM ALUMINUM-POROUS SILICON REVERSE-BIASED SCHOTTKY DIODES FORMED ON THE BASE OF HIGHLY DOPED N-TYPE POLYSILICON
Authors: LAZAROUK S BONDARENKO V LAMONICA S MAIELLO G MASINI G PERSHUKEVICH P FERRARI A
Citation: S. Lazarouk et al., ELECTROLUMINESCENCE FROM ALUMINUM-POROUS SILICON REVERSE-BIASED SCHOTTKY DIODES FORMED ON THE BASE OF HIGHLY DOPED N-TYPE POLYSILICON, Thin solid films, 276(1-2), 1996, pp. 296-298
ELECTRICAL CHARACTERIZATION OF VISIBLE EMITTING ELECTROLUMINESCENT SCHOTTKY DIODES BASED ON N-TYPE POROUS SILICON AND ON HIGHLY DOPED N-TYPE POROUS POLYSILICON
Authors: LAZAROUK S BONDARENKO V JAGUIRO P LACQUANITI N LAMONICA S MAIELLO G MASINI G FERRARI A
Citation: S. Lazarouk et al., ELECTRICAL CHARACTERIZATION OF VISIBLE EMITTING ELECTROLUMINESCENT SCHOTTKY DIODES BASED ON N-TYPE POROUS SILICON AND ON HIGHLY DOPED N-TYPE POROUS POLYSILICON, Journal of non-crystalline solids, 200, 1996, pp. 973-976
STABLE ELECTROLUMINESCENCE FROM REVERSE-BIASED N-TYPE POROUS SILICON-ALUMINUM SCHOTTKY JUNCTION DEVICE
Authors: LAZAROUK S JAGUIRO P KATSOUBA S MASINI G LAMONICA S MAIELLO G FERRARI A
Citation: S. Lazarouk et al., STABLE ELECTROLUMINESCENCE FROM REVERSE-BIASED N-TYPE POROUS SILICON-ALUMINUM SCHOTTKY JUNCTION DEVICE, Applied physics letters, 68(15), 1996, pp. 2108-2110
STABLE ELECTROLUMINESCENCE FROM REVERSE-BIASED N-TYPE POROUS SILICON-ALUMINUM SCHOTTKY JUNCTION DEVICE
Authors: LAZAROUK S JAGUIRO P KATSOUBA S MASINI G LAMONICA S MAIELLO G FERRARI A
Citation: S. Lazarouk et al., STABLE ELECTROLUMINESCENCE FROM REVERSE-BIASED N-TYPE POROUS SILICON-ALUMINUM SCHOTTKY JUNCTION DEVICE, Applied physics letters, 68(12), 1996, pp. 1646-1648
POROUS SILICON OBTAINED BY ANODIZATION IN THE TRANSITION REGIME
Authors: BERTOLOTTI M FAZIO E FERRARI A LAMONICA S LAZAROUK S LIAKHOU G MAIELLO G PROVERBIO E SCHIRONE L CARASSITI F
Citation: M. Bertolotti et al., POROUS SILICON OBTAINED BY ANODIZATION IN THE TRANSITION REGIME, Thin solid films, 255(1-2), 1995, pp. 152-154
ANISOTROPY OF POROUS ANODIZATION OF ALUMINUM FOR VLSI TECHNOLOGY
Authors: LAZAROUK S BARANOV I MAIELLO G PROVERBIO E DECESARE G FERRARI A
Citation: S. Lazarouk et al., ANISOTROPY OF POROUS ANODIZATION OF ALUMINUM FOR VLSI TECHNOLOGY, Journal of the Electrochemical Society, 141(9), 1994, pp. 2556-2559
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