Authors:
VONKAMIENSKI EGS
LEONHARD C
SCHARNHOLZ S
GOLZ A
KURZ H
Citation: Egs. Vonkamienski et al., PASSIVATION OF INTERFACE TRAPS IN MOS-DEVICES ON N-TYPE AND P-TYPE 6H-SIC, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1497-1499
Authors:
VONKAMIENSKI EGS
LEONHARD C
PORTHEINE F
GOLZ A
KURZ H
Citation: Egs. Vonkamienski et al., LONG-TERM STABILITY OF GATE-OXIDES ON N-TYPE AND P-TYPE SILICON-CARBIDE STUDIED BY CHARGE INJECTION TECHNIQUES, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 263-266
Authors:
BANO E
OUISSE T
LEONHARD C
GOLZ A
VONKAMIENSKI EGS
Citation: E. Bano et al., HIGH-FIELD FOWLER-NORDHEIM STRESS OF N-TYPE SILICON-CARBIDE METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Semiconductor science and technology, 12(5), 1997, pp. 525-528
Authors:
LEONHARD C
GASTFRIEND DR
TUFFY LJ
NEILL J
PLOUGH A
Citation: C. Leonhard et al., THE EFFECT OF ANONYMOUS VS NONANONYMOUS RATING CONDITIONS ON PATIENT SATISFACTION AND MOTIVATION RATINGS IN A POPULATION OF SUBSTANCE-ABUSEPATIENTS, Alcoholism, clinical and experimental research, 21(4), 1997, pp. 627-630
Citation: Sc. Hayes et C. Leonhard, AN ALTERNATIVE BEHAVIOR ANALYTIC APPROACH TO VERBAL-BEHAVIOR, Revista mexicana de psicologia, 11(1), 1994, pp. 69-86