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Results: 5

Authors: GAILLARD T LHERMITE H BONNAUD O KISSION K
Citation: T. Gaillard et al., CALIBRATION OF POLYCRYSTALLINE SILICON DEPOSITION AND ETCHING MACHINEINSIDE A TECHNOLOGICAL SIMULATOR, Computational materials science, 11(2), 1998, pp. 109-112

Authors: HBIB H BONNAUD O LHERMITE H MENKASSI A
Citation: H. Hbib et al., DEEP LEVELS IN AU-POXNYINZ-(N)INP MIS STR UCTURES EVALUATED BY FTDLTSTECHNIQUE, Journal de physique. III, 7(2), 1997, pp. 351-367

Authors: AZIZ A LHERMITE H RAOULT F BONNAUD O
Citation: A. Aziz et al., REALIZATION IN CLEAN ROOM AND ELECTRICAL CHARACTERIZATION OF MICROELECTRONIC DEVICES BY DESS STUDENTS, Onde electrique, 75(1), 1995, pp. 22-24

Authors: SEHIL H LHERMITE H RAOULT F COLIN Y
Citation: H. Sehil et al., EFFECT OF THICKNESS AND GRANULAR STRUCTURE ON THE ELECTRICAL-CONDUCTIVITY OF THE ACTIVE LAYER IN POLYCRYSTALLINE SILICON TFTS, Solid-state electronics, 37(1), 1994, pp. 159-168

Authors: AZIZ A BONNAUD O LHERMITE H RAOULT F
Citation: A. Aziz et al., LATERAL POLYSILICON PN DIODES - CURRENT-VOLTAGE CHARACTERISTICS SIMULATION BETWEEN 200-K AND 400-K USING A NUMERICAL APPROACH, I.E.E.E. transactions on electron devices, 41(2), 1994, pp. 204-211
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