Authors: LHEURETTE E MELIQUE X MOUNAIX P MOLLOT F VANBESIEN O LIPPENS D

Citation: E. Lheurette et al., CAPACITANCE ENGINEERING FOR INP-BASED HETEROSTRUCTURE BARRIER VARACTOR, IEEE electron device letters, 19(9), 1998, pp. 338-340

Authors: HAVART R LHEURETTE E VANBESIEN O MOUNAIX P MOLLOT F LIPPENS D

Citation: R. Havart et al., STEP-LIKE HETEROSTRUCTURE BARRIER VARACTOR, I.E.E.E. transactions on electron devices, 45(11), 1998, pp. 2291-2297

Authors: SALZENSTEIN P DUPUIS O HELAL M LHEURETTE E VANBESIEN O MOUNAIX P LIPPENS D

Citation: P. Salzenstein et al., COPLANAR WAVE-GUIDES ON DIELECTRIC MEMBRANES MICROMACHINED ON A GAAS SUBSTRATE, Electronics Letters, 32(9), 1996, pp. 821-822

Authors: LHEURETTE E MOUNAIX P SALZENSTEIN P MOLLOT F LIPPENS D

Citation: E. Lheurette et al., HIGH-PERFORMANCE INP-BASED HETEROSTRUCTURE BARRIER VARACTORS IN SINGLE AND STACK CONFIGURATION, Electronics Letters, 32(15), 1996, pp. 1417-1418

Authors: MOUNAIX P LHEURETTE E MOLLOT F LIPPENS D

Citation: P. Mounaix et al., FREQUENCY CAPABILITY OF STRAINED ALAS INGAAS RESONANT-TUNNELING DIODES/, Electronics Letters, 31(17), 1995, pp. 1508-1510