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Results: 1-8 |
Results: 8
FABRICATION OF FIELD EMITTER ARRAY USING FOCUSED ION AND ELECTRON-BEAM-INDUCED REACTION
Authors: TAKAI M KISHIMOTO T MORIMOTO H PARK YK LIPP S LEHRER C FREY L RYSSEL H HOSONO A KAWABUCHI S
Citation: M. Takai et al., FABRICATION OF FIELD EMITTER ARRAY USING FOCUSED ION AND ELECTRON-BEAM-INDUCED REACTION, Microelectronic engineering, 42, 1998, pp. 453-456
ELECTRON-BEAM-INDUCED DEPOSITION OF PT FOR FIELD EMITTER ARRAYS
Authors: MORIMOTO H KISHIMOTO T TAKAI M YURA S HOSONO A OKUDA S LIPP S FREY L RYSSEL H
Citation: H. Morimoto et al., ELECTRON-BEAM-INDUCED DEPOSITION OF PT FOR FIELD EMITTER ARRAYS, JPN J A P 1, 35(12B), 1996, pp. 6623-6625
TETRAMETHOXYSILANE AS A PRECURSOR FOR FOCUSED ION-BEAM AND ELECTRON-BEAM ASSISTED INSULATOR (SIOX) DEPOSITION
Authors: LIPP S FREY L LEHRER C FRANK B DEMM E PAUTHNER S RYSSEL H
Citation: S. Lipp et al., TETRAMETHOXYSILANE AS A PRECURSOR FOR FOCUSED ION-BEAM AND ELECTRON-BEAM ASSISTED INSULATOR (SIOX) DEPOSITION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3920-3923
INVESTIGATIONS ON THE TOPOLOGY OF STRUCTURES MILLED AND ETCHED BY FOCUSED ION-BEAMS
Authors: LIPP S FREY L LEHRER C FRANK B DEMM E RYSSEL H
Citation: S. Lipp et al., INVESTIGATIONS ON THE TOPOLOGY OF STRUCTURES MILLED AND ETCHED BY FOCUSED ION-BEAMS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3996-3999
MODIFICATION OF FIELD EMITTER ARRAY TIP SHAPE BY FOCUSED ION-BEAM IRRADIATION
Authors: TAKAI M KISHIMOTO T YAMASHITA M MORIMOTO H YURA S HOSONO A OKUDA S LIPP S FREY L RYSSEL H
Citation: M. Takai et al., MODIFICATION OF FIELD EMITTER ARRAY TIP SHAPE BY FOCUSED ION-BEAM IRRADIATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1973-1976
A COMPARISON OF FOCUSED ION-BEAM AND ELECTRON-BEAM-INDUCED DEPOSITIONPROCESSES
Authors: LIPP S FREY L LEHRER C DEMM E PAUTHNER S RYSSEL H
Citation: S. Lipp et al., A COMPARISON OF FOCUSED ION-BEAM AND ELECTRON-BEAM-INDUCED DEPOSITIONPROCESSES, Microelectronics and reliability, 36(11-12), 1996, pp. 1779-1782
LOCAL MATERIAL REMOVAL BY FOCUSED ION-BEAM MILLING AND ETCHING
Authors: LIPP S FREY L FRANZ G DEMM E PETERSEN S RYSSEL H
Citation: S. Lipp et al., LOCAL MATERIAL REMOVAL BY FOCUSED ION-BEAM MILLING AND ETCHING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 630-635
PRACTICAL ASPECTS OF ION-BEAM ANALYSIS OF SEMICONDUCTOR STRUCTURES
Authors: FREY L PICHLER P KASKO I THIES I LIPP S STRECKFUSS N GONG L RYSSEL H
Citation: L. Frey et al., PRACTICAL ASPECTS OF ION-BEAM ANALYSIS OF SEMICONDUCTOR STRUCTURES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 356-362
Risultati: 1-8 |