Authors: EDWARDS H MCGLOTHLIN R SANMARTIN R U E GRIBELYUK M MAHAFFY R SHIH CK LIST RS UKRAINTSEV VA

Citation: H. Edwards et al., SCANNING CAPACITANCE SPECTROSCOPY - AN ANALYTICAL TECHNIQUE FOR PN-JUNCTION DELINEATION IN SI DEVICES, Applied physics letters, 72(6), 1998, pp. 698-700

Authors: LIST RS SINGH A RALSTON A DIXIT G

Citation: Rs. List et al., INTEGRATION OF LOW-K DIELECTRIC MATERIALS INTO SUB-0.25-MU-M INTERCONNECTS, MRS bulletin, 22(10), 1997, pp. 61-69

Authors: CHEN MC LIST RS CHANDRA D BEVAN MJ COLOMBO L SCHAAKE HF

Citation: Mc. Chen et al., KEY PERFORMANCE-LIMITING DEFECTS IN P-ON-N HGCDTE LPE HETEROJUNCTION INFRARED PHOTODIODES, Journal of electronic materials, 25(8), 1996, pp. 1375-1382

Authors: WAN CF LUTTMER JD LIST RS STRONG RL

Citation: Cf. Wan et al., PIEZOELECTRIC EFFECTS IN HGCDTE DEVICES, Journal of electronic materials, 24(9), 1995, pp. 1293-1297

Authors: SCHIEBEL R BARTHOLOMEW D BEVAN M LIST RS OHLSON M

Citation: R. Schiebel et al., 1 F NOISE AND MATERIAL DEFECTS IN HGCDTE DIODES/, Journal of electronic materials, 24(9), 1995, pp. 1299-1303

Authors: LIST RS

Citation: Rs. List, ELECTRICAL EFFECTS OF DISLOCATIONS AND OTHER CRYSTALLOGRAPHIC DEFECTSIN HG0.78CD0.22TE N-ON-P PHOTODIODES, Journal of electronic materials, 22(8), 1993, pp. 1017-1025