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Results: 1-8 |
Results: 8
FORMATION OF DIRECTLY BONDED SI SI INTERFACES IN ULTRA-HIGH-VACUUM/
Authors: LJUNGBERG K GREY F BENGTSSON S
Citation: K. Ljungberg et al., FORMATION OF DIRECTLY BONDED SI SI INTERFACES IN ULTRA-HIGH-VACUUM/, Applied surface science, 117, 1997, pp. 813-819
MODIFICATION OF SILICON SURFACES WITH H2SO4-H2O2-HF AND HNO3-HF FOR WAFER BONDING APPLICATIONS
Authors: LJUNGBERG K JANSSON U BENGTSSON S SODERBARG A
Citation: K. Ljungberg et al., MODIFICATION OF SILICON SURFACES WITH H2SO4-H2O2-HF AND HNO3-HF FOR WAFER BONDING APPLICATIONS, Journal of the Electrochemical Society, 143(5), 1996, pp. 1709-1714
THE INFLUENCE OF WAFER DIMENSIONS ON THE CONTACT WAVE VELOCITY IN SILICON-WAFER BONDING
Authors: BENGTSSON S LJUNGBERG K VEDDE J
Citation: S. Bengtsson et al., THE INFLUENCE OF WAFER DIMENSIONS ON THE CONTACT WAVE VELOCITY IN SILICON-WAFER BONDING, Applied physics letters, 69(22), 1996, pp. 3381-3383
OPTICALLY TRAPPED NONLINEAR PARTICLES AS PROBES FOR SCANNING NEAR-FIELD OPTICAL MICROSCOPY
Authors: HERTZ HM MALMQVIST L ROSENGREN L LJUNGBERG K
Citation: Hm. Hertz et al., OPTICALLY TRAPPED NONLINEAR PARTICLES AS PROBES FOR SCANNING NEAR-FIELD OPTICAL MICROSCOPY, Ultramicroscopy, 57(2-3), 1995, pp. 309-312
THE EFFECTS OF HF CLEANING PRIOR TO SILICON-WAFER BONDING
Authors: LJUNGBERG K BACKLUND Y SODERBARG A BERGH M ANDERSSON MO BENGTSSON S
Citation: K. Ljungberg et al., THE EFFECTS OF HF CLEANING PRIOR TO SILICON-WAFER BONDING, Journal of the Electrochemical Society, 142(4), 1995, pp. 1297-1303
IMPROVED DIRECT BONDING OF SI AND SIO2 SURFACES BY CLEANING IN H2SO4-H2O2-HF
Authors: LJUNGBERG K SODERBARG A JANSSON U
Citation: K. Ljungberg et al., IMPROVED DIRECT BONDING OF SI AND SIO2 SURFACES BY CLEANING IN H2SO4-H2O2-HF, Applied physics letters, 67(5), 1995, pp. 650-652
CHARACTERIZATION OF SPONTANEOUSLY BONDED HYDROPHOBIC SILICON SURFACES
Authors: LJUNGBERG K SODERBARG A BENGTSSON S JAUHIAINEN A
Citation: K. Ljungberg et al., CHARACTERIZATION OF SPONTANEOUSLY BONDED HYDROPHOBIC SILICON SURFACES, Journal of the Electrochemical Society, 141(2), 1994, pp. 562-566
BURIED COBALT SILICIDE LAYERS IN SILICON CREATED BY WAFER BONDING
Authors: LJUNGBERG K SODERBARG A TIENSUU AL JOHANSSON S THUNGSTROM G PETERSSON CS
Citation: K. Ljungberg et al., BURIED COBALT SILICIDE LAYERS IN SILICON CREATED BY WAFER BONDING, Journal of the Electrochemical Society, 141(10), 1994, pp. 2829-2833
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