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Results: 1-14 |
Results: 14
STUDY OF THE MECHANISMS OF GAN FILM GROWTH ON GAAS-SURFACES BY THERMAL AND PLASMA NITRIDATION
Authors: LOSURDO M CAPEZZUTO P BRUNO G LEFEBVRE PR IRENE EA
Citation: M. Losurdo et al., STUDY OF THE MECHANISMS OF GAN FILM GROWTH ON GAAS-SURFACES BY THERMAL AND PLASMA NITRIDATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2665-2671
IN-SITU ELLIPSOMETRIC MONITORING OF GAAS SURFACE MODIFICATIONS DURINGPLASMA PROCESSING - CHEMISTRY AND KINETICS
Authors: LOSURDO M CAPEZZUTO P BRUNO G
Citation: M. Losurdo et al., IN-SITU ELLIPSOMETRIC MONITORING OF GAAS SURFACE MODIFICATIONS DURINGPLASMA PROCESSING - CHEMISTRY AND KINETICS, Thin solid films, 313, 1998, pp. 501-505
PLASMA-SURFACE INTERACTIONS IN THE PROCESSING OF III-V SEMICONDUCTOR-MATERIALS
Authors: LOSURDO M CAPEZZUTO P BRUNO G
Citation: M. Losurdo et al., PLASMA-SURFACE INTERACTIONS IN THE PROCESSING OF III-V SEMICONDUCTOR-MATERIALS, Pure and applied chemistry, 70(6), 1998, pp. 1181-1186
CHEMISTRY AND KINETICS OF THE GAAS OXIDATION BY PLASMA ANODIZATION - AN IN-SITU REAL-TIME ELLIPSOMETRIC STUDY
Authors: LOSURDO M CAPEZZUTO P BRUNO G
Citation: M. Losurdo et al., CHEMISTRY AND KINETICS OF THE GAAS OXIDATION BY PLASMA ANODIZATION - AN IN-SITU REAL-TIME ELLIPSOMETRIC STUDY, Physical review. B, Condensed matter, 56(16), 1997, pp. 10621-10627
ENHANCED PHOTOLUMINESCENCE FROM INP DEPOSITED AND TREATED BY REMOTE PLASMA PROCESSES
Authors: CAPOZZI V TROVATO T LORUSSO GF PERNA G LOSURDO M CAPEZZUTO P BRUNO G
Citation: V. Capozzi et al., ENHANCED PHOTOLUMINESCENCE FROM INP DEPOSITED AND TREATED BY REMOTE PLASMA PROCESSES, Journal of luminescence, 72-4, 1997, pp. 98-100
ON THE USE OF REMOTE RF PLASMA SOURCE TO ENHANCE III-V MOCVD TECHNOLOGY
Authors: BRUNO G LOSURDO M CAPEZZUTO P
Citation: G. Bruno et al., ON THE USE OF REMOTE RF PLASMA SOURCE TO ENHANCE III-V MOCVD TECHNOLOGY, Journal of crystal growth, 170(1-4), 1997, pp. 301-305
STUDY OF THE H-2 REMOTE PLASMA CLEANING OF INP SUBSTRATE FOR EPITAXIAL-GROWTH
Authors: LOSURDO M CAPEZZUTO P BRUNO G
Citation: M. Losurdo et al., STUDY OF THE H-2 REMOTE PLASMA CLEANING OF INP SUBSTRATE FOR EPITAXIAL-GROWTH, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 691-697
CHEMISTRY AND KINETICS OF THE INTERACTION OF HYDROGEN-ATOMS WITH (100)INP SURFACES - AN IN-SITU REAL-TIME ELLIPSOMETRIC STUDY
Authors: BRUNO G CAPEZZUTO P LOSURDO M
Citation: G. Bruno et al., CHEMISTRY AND KINETICS OF THE INTERACTION OF HYDROGEN-ATOMS WITH (100)INP SURFACES - AN IN-SITU REAL-TIME ELLIPSOMETRIC STUDY, Physical review. B, Condensed matter, 54(23), 1996, pp. 17175-17183
HYDROGEN PLASMA PASSIVATION OF INP - REAL-TIME ELLIPSOMETRY MONITORING AND EX-SITU PHOTOLUMINESCENCE MEASUREMENTS
Authors: BRUNO G LOSURDO M CAPEZZUTO P CAPOZZI V TROVATO T PERNA G LORUSSO GF
Citation: G. Bruno et al., HYDROGEN PLASMA PASSIVATION OF INP - REAL-TIME ELLIPSOMETRY MONITORING AND EX-SITU PHOTOLUMINESCENCE MEASUREMENTS, Applied physics letters, 69(5), 1996, pp. 685-687
ON THE USE OF H-2 PLASMA FOR THE CLEANING AND PASSIVATION OF INP SUBSTRATES
Authors: BRUNO G LOSURDO M CAPEZZUTO P
Citation: G. Bruno et al., ON THE USE OF H-2 PLASMA FOR THE CLEANING AND PASSIVATION OF INP SUBSTRATES, Journal de physique. IV, 5(C5), 1995, pp. 663-670
GROWTH OF INP IN A NOVEL REMOTE-PLASMA MOCVD APPARATUS - AN APPROACH TO IMPROVE PROCESS AND MATERIAL PROPERTIES
Authors: BRUNO G CAPEZZUTO P LOSURDO M
Citation: G. Bruno et al., GROWTH OF INP IN A NOVEL REMOTE-PLASMA MOCVD APPARATUS - AN APPROACH TO IMPROVE PROCESS AND MATERIAL PROPERTIES, Journal de physique. IV, 5(C5), 1995, pp. 481-488
GROWTH OF INP IN A NOVEL REMOTE-PLASMA MOCVD APPARATUS - AN APPROACH TO IMPROVE PROCESS AND MATERIAL PROPERTIES
Authors: BRUNO G CAPEZZUTO P LOSURDO M
Citation: G. Bruno et al., GROWTH OF INP IN A NOVEL REMOTE-PLASMA MOCVD APPARATUS - AN APPROACH TO IMPROVE PROCESS AND MATERIAL PROPERTIES, Journal de physique. IV, 5(C5), 1995, pp. 481-488
STUDY OF THE PHOSPHINE PLASMA DECOMPOSITION AND ITS FORMATION BY ABLATION OF RED PHOSPHORUS IN HYDROGEN PLASMA
Authors: BRUNO G LOSURDO M CAPEZZUTO P
Citation: G. Bruno et al., STUDY OF THE PHOSPHINE PLASMA DECOMPOSITION AND ITS FORMATION BY ABLATION OF RED PHOSPHORUS IN HYDROGEN PLASMA, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(2), 1995, pp. 349-358
PHOSPHORUS ABLATION PROCESS AS A HYDROGEN-ATOM PROBE IN A REMOTE H-2 PLASMA REACTOR
Authors: BRUNO G LOSURDO M CAPEZZUTO P
Citation: G. Bruno et al., PHOSPHORUS ABLATION PROCESS AS A HYDROGEN-ATOM PROBE IN A REMOTE H-2 PLASMA REACTOR, Applied physics letters, 66(26), 1995, pp. 3573-3575
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