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Results: 1-9 |
Results: 9
MODELING THE DEGRADATION IN THE SUBTHRESHOLD CHARACTERISTICS OF SUBMICROMETER LDD PMOSFETS UNDER HOT-CARRIER STRESSING
Authors: QIN WH CHIM WK CHAN DSH LOU CL
Citation: Wh. Qin et al., MODELING THE DEGRADATION IN THE SUBTHRESHOLD CHARACTERISTICS OF SUBMICROMETER LDD PMOSFETS UNDER HOT-CARRIER STRESSING, Semiconductor science and technology, 13(5), 1998, pp. 453-459
A NOVEL SINGLE-DEVICE DC METHOD FOR EXTRACTION OF THE EFFECTIVE MOBILITY AND SOURCE-DRAIN RESISTANCES OF FRESH AND HOT-CARRIER DEGRADED DRAIN-ENGINEERED MOSFETS
Authors: LOU CL CHIM WK SIUHUNG D PAN Y
Citation: Cl. Lou et al., A NOVEL SINGLE-DEVICE DC METHOD FOR EXTRACTION OF THE EFFECTIVE MOBILITY AND SOURCE-DRAIN RESISTANCES OF FRESH AND HOT-CARRIER DEGRADED DRAIN-ENGINEERED MOSFETS, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1317-1323
A NEW DC DRAIN-CURRENT-CONDUCTANCE METHOD (DCCM) FOR THE CHARACTERIZATION OF EFFECTIVE MOBILTY (U(EFF)) AND SERIES RESISTANCES (R-S, R-D) OF FRESH AND HOT-CARRIER STRESSED GRADED JUNCTION MOSFETS
Authors: LOU CL CHIM WK CHAN DSH PAN Y
Citation: Cl. Lou et al., A NEW DC DRAIN-CURRENT-CONDUCTANCE METHOD (DCCM) FOR THE CHARACTERIZATION OF EFFECTIVE MOBILTY (U(EFF)) AND SERIES RESISTANCES (R-S, R-D) OF FRESH AND HOT-CARRIER STRESSED GRADED JUNCTION MOSFETS, IEEE electron device letters, 18(7), 1997, pp. 327-329
INVESTIGATION OF INTERFACE TRAPS IN LDD PMOSTS BY THE DCIV METHOD
Authors: JIE BB LI MF LOU CL CHIM WK CHAN DSH LO KF
Citation: Bb. Jie et al., INVESTIGATION OF INTERFACE TRAPS IN LDD PMOSTS BY THE DCIV METHOD, IEEE electron device letters, 18(12), 1997, pp. 583-585
HOT-CARRIER RELIABILITY OF NON-DEGENERATELY DOPED TUNGSTEN POLYCIDE GATE BURIED-CHANNEL P-MOSFETS
Authors: LOU CL CHIM WK CHAN DSH PAN Y
Citation: Cl. Lou et al., HOT-CARRIER RELIABILITY OF NON-DEGENERATELY DOPED TUNGSTEN POLYCIDE GATE BURIED-CHANNEL P-MOSFETS, Solid-state electronics, 41(8), 1997, pp. 1171-1176
DISTINGUISHING THE EFFECTS OF OXIDE TRAPPED CHARGES AND INTERFACE STATES IN DDD AND LATID NMOSFETS USING PHOTON-EMISSION SPECTROSCOPY
Authors: CHIM WK CHAN DSH TAO JM LOU CL LEANG SE TEOW CK
Citation: Wk. Chim et al., DISTINGUISHING THE EFFECTS OF OXIDE TRAPPED CHARGES AND INTERFACE STATES IN DDD AND LATID NMOSFETS USING PHOTON-EMISSION SPECTROSCOPY, Journal of physics. D, Applied physics, 30(17), 1997, pp. 2411-2420
HOT-CARRIER-INDUCED DEGRADATION OF POLYSILICON AND TUNGSTEN POLYCIDE GATE MOSFETS UNDER MAXIMUM SUBSTRATE AND GATE CURRENT STRESSES
Authors: LOU CL CHIM WK CHAN DSH PAN Y
Citation: Cl. Lou et al., HOT-CARRIER-INDUCED DEGRADATION OF POLYSILICON AND TUNGSTEN POLYCIDE GATE MOSFETS UNDER MAXIMUM SUBSTRATE AND GATE CURRENT STRESSES, Semiconductor science and technology, 11(10), 1996, pp. 1381-1387
HOT-CARRIER RELIABILITY OF N-CHANNEL AND P-CHANNEL MOSFETS WITH POLYSILICON AND CVD TUNGSTEN-POLYCIDE GATE
Authors: LOU CL CHIM WK CHAN DSH PAN Y
Citation: Cl. Lou et al., HOT-CARRIER RELIABILITY OF N-CHANNEL AND P-CHANNEL MOSFETS WITH POLYSILICON AND CVD TUNGSTEN-POLYCIDE GATE, Microelectronics and reliability, 36(11-12), 1996, pp. 1663-1666
SCULPTED SPIRITS, JIANG,CHENQIAN ART OF COPPER RELIEF
Authors: LOU CL ZHANG SP
Citation: Cl. Lou et Sp. Zhang, SCULPTED SPIRITS, JIANG,CHENQIAN ART OF COPPER RELIEF, Chinese Literature, 1996, pp. 143
Risultati: 1-9 |