Citation: Wh. Qin et al., MODELING THE DEGRADATION IN THE SUBTHRESHOLD CHARACTERISTICS OF SUBMICROMETER LDD PMOSFETS UNDER HOT-CARRIER STRESSING, Semiconductor science and technology, 13(5), 1998, pp. 453-459
Citation: Cl. Lou et al., A NOVEL SINGLE-DEVICE DC METHOD FOR EXTRACTION OF THE EFFECTIVE MOBILITY AND SOURCE-DRAIN RESISTANCES OF FRESH AND HOT-CARRIER DEGRADED DRAIN-ENGINEERED MOSFETS, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1317-1323
Citation: Cl. Lou et al., A NEW DC DRAIN-CURRENT-CONDUCTANCE METHOD (DCCM) FOR THE CHARACTERIZATION OF EFFECTIVE MOBILTY (U(EFF)) AND SERIES RESISTANCES (R-S, R-D) OF FRESH AND HOT-CARRIER STRESSED GRADED JUNCTION MOSFETS, IEEE electron device letters, 18(7), 1997, pp. 327-329
Authors:
CHIM WK
CHAN DSH
TAO JM
LOU CL
LEANG SE
TEOW CK
Citation: Wk. Chim et al., DISTINGUISHING THE EFFECTS OF OXIDE TRAPPED CHARGES AND INTERFACE STATES IN DDD AND LATID NMOSFETS USING PHOTON-EMISSION SPECTROSCOPY, Journal of physics. D, Applied physics, 30(17), 1997, pp. 2411-2420
Citation: Cl. Lou et al., HOT-CARRIER-INDUCED DEGRADATION OF POLYSILICON AND TUNGSTEN POLYCIDE GATE MOSFETS UNDER MAXIMUM SUBSTRATE AND GATE CURRENT STRESSES, Semiconductor science and technology, 11(10), 1996, pp. 1381-1387
Citation: Cl. Lou et al., HOT-CARRIER RELIABILITY OF N-CHANNEL AND P-CHANNEL MOSFETS WITH POLYSILICON AND CVD TUNGSTEN-POLYCIDE GATE, Microelectronics and reliability, 36(11-12), 1996, pp. 1663-1666