Authors:
LAMBERT B
LECORRE A
DROUOT V
LHARIDON H
LOUALICHE S
Citation: B. Lambert et al., HIGH PHOTOLUMINESCENCE EFFICIENCY OF INAS INP SELF-ASSEMBLED QUANTUM DOTS EMITTING AT 1.5-1.6 MU-M/, Semiconductor science and technology, 13(1), 1998, pp. 143-145
Authors:
FOLLIOT H
LOUALICHE S
LAMBERT B
DROUOT V
LECORRE A
Citation: H. Folliot et al., EFFECTS OF INTERFACE-LAYERS COMPOSITION AND STRAIN DISTRIBUTION ON THE OPTICAL-TRANSITIONS OF INAS QUANTUM DOTS ON INP, Physical review. B, Condensed matter, 58(16), 1998, pp. 10700-10704
Authors:
FRECHENGUES S
DROUOT V
LAMBERT B
LEMOINE D
LOUALICHE S
LECORRE A
LHARIDON H
Citation: S. Frechengues et al., DIRECT CORRELATION OF STRUCTURAL AND OPTICAL-PROPERTIES OF INAS SELF-ASSEMBLED DOTS DEPOSITED ON INP(100), Applied physics letters, 71(19), 1997, pp. 2818-2820
Authors:
SACILOTTI M
ABRAHAM P
PITAVAL W
AMBRI M
BENYATTOU T
TABATA A
PEREZ MAG
MOTISUKE P
LANDERS R
MORAIS J
LECORRE A
LOUALICHE S
Citation: M. Sacilotti et al., STRUCTURAL AND OPTICAL-PROPERTIES OF ALINAS INP AND GAPSB/INP TYPE-IIINTERFACES/, Canadian journal of physics, 74(5-6), 1996, pp. 202-208
Authors:
GODEFROY A
LECORRE A
CLEROT F
SALAUN S
LOUALICHE S
SIMON JC
HENRY L
VAUDRY C
KEROMNES JC
JOULIE G
LAMOULER P
Citation: A. Godefroy et al., 1.55-MU-M POLARIZATION-INSENSITIVE OPTICAL AMPLIFIER WITH STRAIN-BALANCED SUPERLATTICE ACTIVE LAYER, IEEE photonics technology letters, 7(5), 1995, pp. 473-475
Authors:
LOUALICHE S
LECORRE A
GODEFROY A
CLEROT F
LECROSNIER D
POUDOULEC A
SALAUN S
Citation: S. Loualiche et al., INGAAS INP STRAINED-LAYER QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 127(1-4), 1993, pp. 258-260