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Results: 1-11 |
Results: 11
FABRICATION OF HETEROJUNCTION BIPOLAR-TRANSISTORS WITH BURIED SUBCOLLECTOR LAYERS FOR REDUCTION OF BASE-COLLECTOR CAPACITANCE BY MOLECULAR-BEAM EPITAXY REGROWTH
Authors: MICOVIC M NORDQUIST CD LUBYSHEV D MAYER TS MILLER DL STREATER RW SPRINGTHORPE AJ
Citation: M. Micovic et al., FABRICATION OF HETEROJUNCTION BIPOLAR-TRANSISTORS WITH BURIED SUBCOLLECTOR LAYERS FOR REDUCTION OF BASE-COLLECTOR CAPACITANCE BY MOLECULAR-BEAM EPITAXY REGROWTH, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 962-967
GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A BASE DOPING 10(20) CM(-3) GROWN BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY USING CBR4/
Authors: MICOVIC M NORDQUIST C LUBYSHEV D MAYER TS MILLER DL STREATER RW SPRINGTHORPE AJ
Citation: M. Micovic et al., GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A BASE DOPING 10(20) CM(-3) GROWN BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY USING CBR4/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 972-976
KINETIC LIMIT OF SEGREGATION DURING THE MOLECULAR-BEAM EPITAXY OF GAAS ALAS HETEROSTRUCTURES/
Authors: ZANELATTO G PUSEP YA GALZERANI JC GONZALEZBORRERO PP LUBYSHEV D BASMAJI P
Citation: G. Zanelatto et al., KINETIC LIMIT OF SEGREGATION DURING THE MOLECULAR-BEAM EPITAXY OF GAAS ALAS HETEROSTRUCTURES/, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1-2, 1998, pp. 237-242
SCANNING-TUNNELING-MICROSCOPY STUDY OF THE EVOLUTION OF THE GAAS(001)SURFACE DURING THE (2X4)-(4X2) PHASE-TRANSITION
Authors: CHIZHOV I LEE G WILLIS RF LUBYSHEV D MILLER DL
Citation: I. Chizhov et al., SCANNING-TUNNELING-MICROSCOPY STUDY OF THE EVOLUTION OF THE GAAS(001)SURFACE DURING THE (2X4)-(4X2) PHASE-TRANSITION, Applied surface science, 123, 1998, pp. 192-198
LUMINESCENCE FROM GAAS(100) SURFACE EXCITED BY A SCANNING TUNNELING MICROSCOPE
Authors: CHIZHOV I LEE G WILLIS RF LUBYSHEV D MILLER DL
Citation: I. Chizhov et al., LUMINESCENCE FROM GAAS(100) SURFACE EXCITED BY A SCANNING TUNNELING MICROSCOPE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 1432-1437
GAAS(001)-2X3 SURFACE STUDIED BY SCANNING-TUNNELING-MICROSCOPY
Authors: CHIZHOV I LEE GS WILLIS RF LUBYSHEV D MILLER DL
Citation: I. Chizhov et al., GAAS(001)-2X3 SURFACE STUDIED BY SCANNING-TUNNELING-MICROSCOPY, Physical review. B, Condensed matter, 56(3), 1997, pp. 1013-1016
IODINE-ASSISTED MOLECULAR-BEAM EPITAXY
Authors: MICOVIC M LUBYSHEV D CAI WZ FLACK F STREATER RW SPRINGTHORPE AJ MILLER DL
Citation: M. Micovic et al., IODINE-ASSISTED MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 175, 1997, pp. 428-434
INFLUENCE OF SURFACE-STRUCTURE ON SEGREGATION AND ALLOY PROPERTIES IN(100)-ORIENTED AND (311)-ORIENTED INGAAS GAAS HETEROSTRUCTURES/
Authors: GUIMARAES FEG GONZALEZBORRERO PP LUBYSHEV D BASMAJI P
Citation: Feg. Guimaraes et al., INFLUENCE OF SURFACE-STRUCTURE ON SEGREGATION AND ALLOY PROPERTIES IN(100)-ORIENTED AND (311)-ORIENTED INGAAS GAAS HETEROSTRUCTURES/, Solid-state electronics, 40(1-8), 1996, pp. 659-663
INFLUENCE OF SURFACE-STRUCTURE ON SURFACE SEGREGATION AND ALLOY PROPERTIES IN (100)-ORIENTED AND (311)-ORIENTED INGAAS GAAS HETEROSTRUCTURES/
Authors: GUIMARAES FEG LUBYSHEV D CHITTA VA BASMAJI P
Citation: Feg. Guimaraes et al., INFLUENCE OF SURFACE-STRUCTURE ON SURFACE SEGREGATION AND ALLOY PROPERTIES IN (100)-ORIENTED AND (311)-ORIENTED INGAAS GAAS HETEROSTRUCTURES/, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 318-321
STRAIN RELATED SHALLOW LEVELS IN (100)-ORIENTED AND (311)-ORIENTED INGAAS GAAS QUANTUM-WELL STRUCTURES/
Authors: GUIMARAES FEG LUBYSHEV D DASILVA SW CHITTA VA GALZERANI JC BASMAJI P
Citation: Feg. Guimaraes et al., STRAIN RELATED SHALLOW LEVELS IN (100)-ORIENTED AND (311)-ORIENTED INGAAS GAAS QUANTUM-WELL STRUCTURES/, Solid state communications, 93(5), 1995, pp. 466-466
EFFECT OF ALLOY DISORDER AND STRUCTURAL DEFECTS ON EXCITONIC PROPERTIES IN (100)-ORIENTED AND (311)-ORIENTED INGAAS GAAS QUANTUM-WELLS/
Authors: GUIMARAES FEG LUBYSHEV D CHITTA VA BASMAJI P
Citation: Feg. Guimaraes et al., EFFECT OF ALLOY DISORDER AND STRUCTURAL DEFECTS ON EXCITONIC PROPERTIES IN (100)-ORIENTED AND (311)-ORIENTED INGAAS GAAS QUANTUM-WELLS/, Superlattices and microstructures, 15(3), 1994, pp. 361-365
Risultati: 1-11 |