Authors: BABENTSOV VN VLASENKO ZK VLASENKO AI LYUBCHENKO AV

Citation: Vn. Babentsov et al., DISTRIBUTION OF A SHALLOW DONOR IMPURITY IN A P-TYPE CDTE WAFER-ANNEALED IN CD VAPORS, Semiconductors, 31(5), 1997, pp. 441-443

Authors: VLASENKO AI VLASENKO ZK LYUBCHENKO AV

Citation: Ai. Vlasenko et al., EXTRACTION OF CHARGE-CARRIERS IN SEMICONDUCTORS WITH A MONOPOLAR COMPONENT OF THE PHOTOCONDUCTIVITY, Semiconductors, 31(11), 1997, pp. 1140-1143

Authors: VLASENKO AI LYUBCHENKO AV CHALAYA VG

Citation: Ai. Vlasenko et al., EVOLUTION OF MACROSCOPIC STRUCTURAL DEFECTS IN SOLID-SOLUTIONS OF CDXHG1-XTE, Semiconductors, 30(2), 1996, pp. 209-211

Authors: VLASENKO AI LYUBCHENKO AV

Citation: Ai. Vlasenko et Av. Lyubchenko, EXTRACTION OF MINORITY-CARRIERS IN PHOTORESISTIVE CDXHG1-XTE CRYSTALSWITH VARIOUS CONDUCTIVITIES, Semiconductors, 28(7), 1994, pp. 695-696