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Results: 1-20 |
Results: 20
Correlation between intermetallic thickness and roughness during solder reflow
Authors: Zuruzi, AS Lahiri, SK Burman, P Siow, KS
Citation: As. Zuruzi et al., Correlation between intermetallic thickness and roughness during solder reflow, J ELEC MAT, 30(8), 2001, pp. 997-1000
Defects in annealed 1.5 MeV boron implanted p-type silicon
Authors: Dai, JY Ong, KK Chi, DZ Liang, MH Leong, KC Chan, L Lahiri, SK
Citation: Jy. Dai et al., Defects in annealed 1.5 MeV boron implanted p-type silicon, J ELEC MAT, 30(7), 2001, pp. 850-854
Solid phase reaction of Ti with Si-Ge layers prepared by Ge-implantation
Authors: Umapathi, B Das, S Lahiri, SK Kal, S
Citation: B. Umapathi et al., Solid phase reaction of Ti with Si-Ge layers prepared by Ge-implantation, J ELEC MAT, 30(1), 2001, pp. 17-22
Modal profiles in Ti : LiNbO3 two-waveguide and three-waveguide couplers by effective-index-based matrix method
Authors: Chakraborty, R Ganguly, P Biswas, JC Lahiri, SK
Citation: R. Chakraborty et al., Modal profiles in Ti : LiNbO3 two-waveguide and three-waveguide couplers by effective-index-based matrix method, OPT COMMUN, 187(1-3), 2001, pp. 155-163
Gd2O3, Ga2O3(Gd2O3), Y2O3, and Ga2O3, as high-k gate dielectrics on SiGe: A comparative study
Authors: Pal, S Ray, SK Chakraborty, BR Lahiri, SK Bose, DN
Citation: S. Pal et al., Gd2O3, Ga2O3(Gd2O3), Y2O3, and Ga2O3, as high-k gate dielectrics on SiGe: A comparative study, J APPL PHYS, 90(8), 2001, pp. 4103-4107
Comparative study of current-voltage characteristics of Ni and Ni(Pt)-alloy silicided p(+)/n diodes
Authors: Chi, DZ Mangelinck, D Lahiri, SK Lee, PS Pey, KL
Citation: Dz. Chi et al., Comparative study of current-voltage characteristics of Ni and Ni(Pt)-alloy silicided p(+)/n diodes, APPL PHYS L, 78(21), 2001, pp. 3256-3258
Integrity of copper-tantalum nitride metallization under different ambientconditions
Authors: Yap, KP Gong, H Dai, JY Osipowicz, T Chan, LH Lahiri, SK
Citation: Kp. Yap et al., Integrity of copper-tantalum nitride metallization under different ambientconditions, J ELCHEM SO, 147(6), 2000, pp. 2312-2318
Nickel-platinum alloy monosilicidation-induced defects in n-type silicon
Authors: Chi, DZ Mangelinck, D Dai, JY Lahiri, SK Pey, KL Ho, CS
Citation: Dz. Chi et al., Nickel-platinum alloy monosilicidation-induced defects in n-type silicon, APPL PHYS L, 76(23), 2000, pp. 3385-3387
An intermetallic study of solder joints with Sn-Ag-Cu lead-free solder
Authors: Chan, CF Lahiri, SK Yuan, P How, JBH
Citation: Cf. Chan et al., An intermetallic study of solder joints with Sn-Ag-Cu lead-free solder, PROCEEDINGS OF 3RD ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE, 2000, pp. 72-80
Characterization of titanium polycide films by atomic force microscope
Authors: Umapathi, B Lahiri, SK Kal, S
Citation: B. Umapathi et al., Characterization of titanium polycide films by atomic force microscope, J MAT S-M E, 10(2), 1999, pp. 97-100
Improved sidelobe performance of cosine series functions
Authors: Kulkarni, RG Lahiri, SK
Citation: Rg. Kulkarni et Sk. Lahiri, Improved sidelobe performance of cosine series functions, IEEE ULTRAS, 46(2), 1999, pp. 464-466
Kinetics of copper and high Pb/high Sn bilayered Pb-Sn solder interactions
Authors: Zuruzi, AS Chiu, CH Lahiri, SK Chua, KM
Citation: As. Zuruzi et al., Kinetics of copper and high Pb/high Sn bilayered Pb-Sn solder interactions, J ELEC MAT, 28(11), 1999, pp. 1224-1230
Ion-assisted low-temperature oxidation for fabrication of strained Si1-xGex and Si1-x-yGexCy MOS capacitors
Authors: Saha, C Ray, SK Lahiri, SK
Citation: C. Saha et al., Ion-assisted low-temperature oxidation for fabrication of strained Si1-xGex and Si1-x-yGexCy MOS capacitors, SEMIC SCI T, 14(11), 1999, pp. 984-987
A study on the effect of incorporating nitrogen ions on titanium disilicide thin film formation for ULSI applications
Authors: Lim, CW Bourdillon, AJ Gong, H Lahiri, SK Pey, KL Lee, KH
Citation: Cw. Lim et al., A study on the effect of incorporating nitrogen ions on titanium disilicide thin film formation for ULSI applications, J MAT SCI L, 18(9), 1999, pp. 743-746
Effects of oxidation and plasma cleaning on the adhesion strength of molding compounds to copper leadframes
Authors: Yi, S Yue, CY Hsieh, JH Fong, LH Lahiri, SK
Citation: S. Yi et al., Effects of oxidation and plasma cleaning on the adhesion strength of molding compounds to copper leadframes, J ADHES SCI, 13(7), 1999, pp. 789-804
A three-waveguide polarization independent power splitter on lithium niobate substrate
Authors: Ganguly, P Biswas, JC Das, S Lahiri, SK
Citation: P. Ganguly et al., A three-waveguide polarization independent power splitter on lithium niobate substrate, OPT COMMUN, 168(5-6), 1999, pp. 349-354
Roughness evolution of Cu6Sn5 intermetallic during soldering
Authors: Zuruzi, AS Chiu, CH Lahiri, SK Tu, KN
Citation: As. Zuruzi et al., Roughness evolution of Cu6Sn5 intermetallic during soldering, J APPL PHYS, 86(9), 1999, pp. 4916-4921
Interdiffusion of high-Sn/high-Pb (SnPb) solders in low-temperature flip chip joints during reflow
Authors: Zuruzi, AS Chiu, CH Chen, WT Lahiri, SK Tu, KN
Citation: As. Zuruzi et al., Interdiffusion of high-Sn/high-Pb (SnPb) solders in low-temperature flip chip joints during reflow, APPL PHYS L, 75(23), 1999, pp. 3635-3637
Coexistence of hexagonal and orthorhombic structures in NiSi films containing Pt
Authors: Dai, JY Mangelinck, D Lahiri, SK
Citation: Jy. Dai et al., Coexistence of hexagonal and orthorhombic structures in NiSi films containing Pt, APPL PHYS L, 75(15), 1999, pp. 2214-2216
Enhancement of thermal stability of NiSi films on (100)Si and (111)Si by Pt addition
Authors: Mangelinck, D Dai, JY Pan, JS Lahiri, SK
Citation: D. Mangelinck et al., Enhancement of thermal stability of NiSi films on (100)Si and (111)Si by Pt addition, APPL PHYS L, 75(12), 1999, pp. 1736-1738
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