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Results:
1-16
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Results: 16
Authors:
Bowallius, O
Anand, S
Nordell, N
Landgren, G
Karlsson, S
Citation: O. Bowallius et al., Scanning capacitance microscopy investigations of SiC structures, MAT SC S PR, 4(1-3), 2001, pp. 209-211
Authors:
Keiper, D
Velling, P
Prost, W
Agethen, M
Tegude, FJ
Landgren, G
Citation: D. Keiper et al., Metalorganic vapour phase epitaxy growth of InP-based heterojunction bipolar transistors with carbon doped InGaAs base using tertiarybutylarsine and tertiarybutylphosphine in N-2 ambient, JPN J A P 1, 39(11), 2000, pp. 6162-6165
Authors:
Keiper, D
Westphalen, R
Landgren, G
Citation: D. Keiper et al., Growth of quaternary InP-based materials by LP-MOVPE using TBA and TBP in N-2 ambient, J ELEC MAT, 29(12), 2000, pp. 1398-1401
Authors:
Grahn, JV
Fosshaug, H
Jargelius, M
Jonsson, P
Linder, M
Malm, BG
Mohadjeri, B
Pejnefors, J
Radamson, HH
Sanden, M
Wang, YB
Landgren, G
Ostling, M
Citation: Jv. Grahn et al., A low-complexity 62-GHz f(T) SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget, SOL ST ELEC, 44(3), 2000, pp. 549-554
Authors:
Vukusic, J
Bengtsson, J
Ghisoni, M
Larsson, A
Carlstrom, CF
Landgren, G
Citation: J. Vukusic et al., Fabrication and characterization of diffractive optical elements in InP for monolithic integration with surface-emitting components, APPL OPTICS, 39(3), 2000, pp. 398-401
Authors:
Silfvenius, C
Landgren, G
Marcinkevicius, S
Citation: C. Silfvenius et al., Carrier transport effects in 1.3 mu m multiple quantum well InGaAsP laser design, JPN J A P 1, 38(2B), 1999, pp. 1227-1229
Authors:
Carlstrom, CF
Anand, S
Landgren, G
Citation: Cf. Carlstrom et al., Trimethylamine: Novel source far low damage reactive ion beam etching of InP, J VAC SCI B, 17(6), 1999, pp. 2660-2663
Authors:
Grandidier, B
Feenstra, RM
Silfvenius, C
Landgren, G
Citation: B. Grandidier et al., Compositional variations in strain-compensated InGaAsP InAsP superlatticesstudied by scanning tunneling microscopy, J VAC SCI A, 17(4), 1999, pp. 2251-2256
Authors:
Bowallius, O
Ankarcrona, J
Hammar, M
Anand, S
Nilsson, S
Landgren, G
Radamson, H
Tilly, L
Citation: O. Bowallius et al., Scanning capacitance microscopy for two-dimensional doping profiling in Si- and InP-based device structures, PHYS SCR, T79, 1999, pp. 163-166
Authors:
Bowallius, O
Anand, S
Hammar, M
Nilsson, S
Landgren, G
Citation: O. Bowallius et al., Scanning capacitance microscopy investigations of buried heterostructure laser structures, APPL SURF S, 145, 1999, pp. 137-140
Authors:
Anand, S
Carlstrom, CF
Messmer, ER
Lourdudoss, S
Landgren, G
Citation: S. Anand et al., Doping landscapes in the nanometer range by scanning capacitance microscopy, APPL SURF S, 145, 1999, pp. 525-529
Authors:
Carlstrom, CF
Anand, S
Landgren, G
Citation: Cf. Carlstrom et al., Extremely smooth surface morphologies in N-2/H-2/CH4 based low energy chemically assisted ion beam etching of InP GaInAsP, THIN SOL FI, 344, 1999, pp. 374-377
Authors:
Keiper, D
Westphalen, R
Landgren, G
Citation: D. Keiper et al., Metal organic vapour-phase epitaxy (MOVPE) growth of InP and InGaAs casingtertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) in N-2 ambient, J CRYST GR, 204(3), 1999, pp. 256-262
Authors:
Keiper, D
Westphalen, R
Landgren, G
Citation: D. Keiper et al., Comparison of carbon doping of InGaAs and GaAs by CBr4 using hydrogen or nitrogen as carrier gas in LP-MOVPE, J CRYST GR, 197(1-2), 1999, pp. 25-30
Authors:
Silfvenius, C
Landgren, G
Marcinkevicius, S
Citation: C. Silfvenius et al., Hole distribution in InGaAsP 1.3-mu m multiple-quantum-well laser structures with different hole confinement energies, IEEE J Q EL, 35(4), 1999, pp. 603-607
Authors:
Silfvenius, C
Landgren, G
Citation: C. Silfvenius et G. Landgren, Design, growth and performance of different QW structures for improved 1300 nm InGaAsP lasers, J CRYST GR, 195(1-4), 1998, pp. 700-705
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