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Citation: N. Galbiati et al., Impact of the As dose in 0.35 mu m EEPROM technology: characterization andmodeling, MICROEL REL, 41(7), 2001, pp. 999-1002

Authors: Larcher, L Pavan, P Albani, L Ghilardi, T

Citation: L. Larcher et al., Bias and W/L dependence of capacitive coupling coefficients in floating gate memory cells, IEEE DEVICE, 48(9), 2001, pp. 2081-2089

Authors: Larcher, L Pavan, P Pellizzer, F Ghidini, G

Citation: L. Larcher et al., A new model of gate capacitance as a simple tool to extract MOS parameters, IEEE DEVICE, 48(5), 2001, pp. 935-945

Authors: Larcher, L Paccagnella, A Ghidini, G

Citation: L. Larcher et al., Gate current in ultrathin MOS capacitors: A new model of tunnel current, IEEE DEVICE, 48(2), 2001, pp. 271-278

Authors: Larcher, L Paccagnella, A Ghidini, G

Citation: L. Larcher et al., A model of the stress induced leakage current in gate oxides, IEEE DEVICE, 48(2), 2001, pp. 285-288

Authors: Larcher, L Paccagnella, A Ceschia, M Ghidini, G

Citation: L. Larcher et al., A model of Radiation Induced Leakage Current (RILC) in ultra-thin gate oxides, IEEE NUCL S, 46(6), 1999, pp. 1553-1561