Authors: Fischetti, MV Laux, SE

Citation: Mv. Fischetti et Se. Laux, Long-range Coulomb interactions in small Si devices. Part I: Performance and reliability, J APPL PHYS, 89(2), 2001, pp. 1205-1231

Authors: Fischetti, MV Laux, SE

Citation: Mv. Fischetti et Se. Laux, Performance degradation of small silicon devices caused by long-range Coulomb interactions, APPL PHYS L, 76(16), 2000, pp. 2277-2279

Authors: Fischetti, MV Laux, SE

Citation: Mv. Fischetti et Se. Laux, Comment on "Influence of the doping element on the electron mobility in n silicon" [J-Appl. Phys. 83, 3096, (1998)], J APPL PHYS, 85(11), 1999, pp. 7984-7985

Authors: Laux, SE Hess, K

Citation: Se. Laux et K. Hess, Revisiting the analytic theory of p-n junction impedance: Improvements guided by computer simulation leading to a new equivalent circuit, IEEE DEVICE, 46(2), 1999, pp. 396-412