Authors: Lavallee, E Beauvais, J Drouin, D Corbin, J

Citation: E. Lavallee et al., Study of the effect of layer thickness, beam energy, and metal density on the resistless silicide direct-write electron-beam lithography process for the fabrication of nanostructures, J VAC SCI A, 18(2), 2000, pp. 681-684

Authors: Lavallee, E Beauvais, J Drouin, D

Citation: E. Lavallee et al., Fabrication of masks for DUV and EUV lithography using silicide direct-write electron beam lithography process, ELECTR LETT, 36(18), 2000, pp. 1589-1590

Authors: Lavallee, E Beauvais, J Drouin, D Beerens, J Morris, D Chaker, M

Citation: E. Lavallee et al., Fabrication of silicide structures by silicide direct-write electron-beam lithography process (SiDWEL) on thin silicon nitride membranes and on tantalum substrates, ELECTR LETT, 35(23), 1999, pp. 2027-2028

Authors: Michel, S Lavallee, E Beauvais, J Mouine, J

Citation: S. Michel et al., Salicidation process for submicrometre gate MOSFET fabrication using a resistless electron beam lithography process, ELECTR LETT, 35(15), 1999, pp. 1283-1284

Authors: Lefebvre, J Beerens, J Feng, Y Wasilewski, Z Beauvais, J Lavallee, E

Citation: J. Lefebvre et al., Electrical transport and far-infrared transmission in a quantum wire array, J VAC SCI B, 16(6), 1998, pp. 2915-2927