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Results: 1-2 |
Results: 2
A 20-nm physical gate length NMOSFET featuring 1.2 nm gate oxide, shallow implanted source and drain and BF2 pockets
Authors: Deleonibus, S Caillat, C Guegan, G Heitzmann, M Nier, ME Tedesco, S Dal'zotto, B Martin, F Mur, P Papon, AM Lecarval, G Biswas, S Souil, D
Citation: S. Deleonibus et al., A 20-nm physical gate length NMOSFET featuring 1.2 nm gate oxide, shallow implanted source and drain and BF2 pockets, IEEE ELEC D, 21(4), 2000, pp. 173-175
A 20-nm physical gate length NMOSFET featuring 1.2-nm gate oxide, shallow implanted source and drain and BF2 pockets (vol 21, pg 173, 2000)
Authors: Deleonibus, S Caillat, C Guegan, G Heitzmann, M Nier, ME Tedesco, SR Dal'zotto, B Martin, F Mur, P Papon, AM Lecarval, G Biswas, S
Citation: S. Deleonibus et al., A 20-nm physical gate length NMOSFET featuring 1.2-nm gate oxide, shallow implanted source and drain and BF2 pockets (vol 21, pg 173, 2000), IEEE ELEC D, 21(12), 2000, pp. 616-616
Risultati: 1-2 |