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Results:
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Results: 8
Authors:
Seelmann-Eggebert, M
Meisen, P
Schaudel, F
Koidl, P
Vescan, A
Leier, H
Citation: M. Seelmann-eggebert et al., Heat-spreading diamond films for GaN-based high-power transistor devices, DIAM RELAT, 10(3-7), 2001, pp. 744-749
Authors:
Leier, H
Vescan, A
Dietrich, R
Wieszt, A
Sledzik, HH
Citation: H. Leier et al., RF characterisation and transient behaviour of AlGaN/GaN power HFETs, IEICE TR EL, E84C(10), 2001, pp. 1442-1447
Authors:
Daumiller, I
Theron, D
Gaquiere, C
Vescan, A
Dietrich, R
Wieszt, A
Leier, H
Vetury, R
Mishra, UK
Smorchkova, IP
Keller, S
Nguyen, NX
Nguyen, C
Kohn, E
Citation: I. Daumiller et al., Current instabilities in GaN-based devices, IEEE ELEC D, 22(2), 2001, pp. 62-64
Authors:
Lee, JS
Vescan, A
Wieszt, A
Dietrich, R
Leier, H
Kwon, YS
Citation: Js. Lee et al., Small signal and power measurements of AlGaN/GaN HEMT with SiN passivation, ELECTR LETT, 37(2), 2001, pp. 130-132
Authors:
Vescan, A
Dietrich, R
Wieszt, A
Schurr, A
Leier, H
Piner, EL
Redwing, JM
Citation: A. Vescan et al., AlGaN/GaN MODFETs on semi-insulating SiC with 3W/mm at 20GHz, ELECTR LETT, 36(14), 2000, pp. 1234-1236
Authors:
Shin, H
Leier, H
Kwon, YS
Citation: H. Shin et al., Emitter size effects on DC current gain and RF performance in InP/InGaAs HBT's, J KOR PHYS, 35, 1999, pp. S1051-S1054
Authors:
Dietrich, R
Vescan, A
Wieszt, A
Leier, H
Boutros, KS
Redwing, JM
Kornitzer, K
Freitag, R
Ebner, T
Thonke, K
Citation: R. Dietrich et al., Effect of illumination on the electrical characteristics of AlGaN/GaN FETs, PHYS ST S-A, 176(1), 1999, pp. 209-212
Authors:
Vescan, A
Dietrich, R
Wieszt, A
Tobler, H
Leier, H
Van Hove, JM
Chow, PP
Wowchak, AM
Citation: A. Vescan et al., MBE grown AlGaN GaN MODFETs with high breakdown voltage, J CRYST GR, 202, 1999, pp. 327-331
Risultati:
1-8
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