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Results: 1-11 |
Results: 11
Dislocation-related pop-in effect in gallium arsenide
Authors: Leipner, HS Lorenz, D Zeckzer, A Grau, P
Citation: Hs. Leipner et al., Dislocation-related pop-in effect in gallium arsenide, PHYS ST S-A, 183(2), 2001, pp. R4-R6
Vacancy clusters in plastically deformed semiconductors
Authors: Leipner, HS Hubner, CG Staab, TEM Haugk, M Sieck, A Krause-Rehberg, R Frauenheim, T
Citation: Hs. Leipner et al., Vacancy clusters in plastically deformed semiconductors, J PHYS-COND, 12(49), 2000, pp. 10071-10078
Structures, energetics and electronic properties of complex III-V semiconductor systems
Authors: Haugk, M Elsner, J Frauenheim, T Staab, TEM Latham, CD Jones, R Leipner, HS Heine, T Seifert, G Sternberg, M
Citation: M. Haugk et al., Structures, energetics and electronic properties of complex III-V semiconductor systems, PHYS ST S-B, 217(1), 2000, pp. 473-511
Determination of arsenic diffusion parameters by sulfur indiffusion in gallium arsenide
Authors: Scholz, RF Werner, P Gosele, U Engler, N Leipner, HS
Citation: Rf. Scholz et al., Determination of arsenic diffusion parameters by sulfur indiffusion in gallium arsenide, J APPL PHYS, 88(12), 2000, pp. 7045-7050
Copper diffusion in dislocation-rich gallium arsenide
Authors: Leipner, HS Scholz, RF Syrowatka, F Schreiber, J Werner, P
Citation: Hs. Leipner et al., Copper diffusion in dislocation-rich gallium arsenide, PHIL MAG A, 79(11), 1999, pp. 2785-2802
Magic number vacancy aggregates in Si and GaAs - structure and positron lifetime studies
Authors: Staab, TEM Haugk, M Sieck, A Frauenheim, T Leipner, HS
Citation: Tem. Staab et al., Magic number vacancy aggregates in Si and GaAs - structure and positron lifetime studies, PHYSICA B, 274, 1999, pp. 501-504
Diffusivity of arsenic interstitials in GaAs studied by sulfur in-diffusion
Authors: Leipner, HS Scholz, RF Engler, N Borner, F Werner, P Gosele, U
Citation: Hs. Leipner et al., Diffusivity of arsenic interstitials in GaAs studied by sulfur in-diffusion, PHYSICA B, 274, 1999, pp. 697-700
Defect investigations in plastically deformed gallium arsenide
Authors: Leipner, HS Hubner, CG Grau, P Krause-Rehberg, R
Citation: Hs. Leipner et al., Defect investigations in plastically deformed gallium arsenide, PHYSICA B, 274, 1999, pp. 710-713
Magic number vacancy aggregates in GaAs: Structure and positron lifetime studies
Authors: Staab, TEM Haugk, M Frauenheim, T Leipner, HS
Citation: Tem. Staab et al., Magic number vacancy aggregates in GaAs: Structure and positron lifetime studies, PHYS REV L, 83(26), 1999, pp. 5519-5522
Recognition and distribution of A(g) and B(g) dislocations in indentation deformation zones on {111} and {110} surfaces of CdTe
Authors: Schreiber, J Horing, L Uniewski, H Hildebrandt, S Leipner, HS
Citation: J. Schreiber et al., Recognition and distribution of A(g) and B(g) dislocations in indentation deformation zones on {111} and {110} surfaces of CdTe, PHYS ST S-A, 171(1), 1999, pp. 89-97
Positron annihilation at dislocations and related point defects in semiconductors
Authors: Leipner, HS Hubner, CG Staab, TEM Haugk, M Krause-Rehberg, R
Citation: Hs. Leipner et al., Positron annihilation at dislocations and related point defects in semiconductors, PHYS ST S-A, 171(1), 1999, pp. 377-382
Risultati: 1-11 |