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Results: 1-10 |
Results: 10
Interfacial layer formation in Gd2O3 films deposited directly on Si(001)
Authors: Gupta, JA Landheer, D Sproule, GI McCaffrey, JP Graham, MJ Yang, KC Lu, ZH Lennard, WN
Citation: Ja. Gupta et al., Interfacial layer formation in Gd2O3 films deposited directly on Si(001), APPL SURF S, 173(3-4), 2001, pp. 318-326
Characterization of Gd2O3 films deposited on Si(100) by electron-beam evaporation
Authors: Landheer, D Gupta, JA Sproule, GI McCaffrey, JP Graham, MJ Yang, KC Lu, ZH Lennard, WN
Citation: D. Landheer et al., Characterization of Gd2O3 films deposited on Si(100) by electron-beam evaporation, J ELCHEM SO, 148(2), 2001, pp. G29-G35
Thermal stability and diffusion in gadolinium silicate gate dielectric films
Authors: Landheer, D Wu, X Morais, J Baumvol, IJR Pezzi, RP Miotti, L Lennard, WN Kim, JK
Citation: D. Landheer et al., Thermal stability and diffusion in gadolinium silicate gate dielectric films, APPL PHYS L, 79(16), 2001, pp. 2618-2620
The use of X-ray absorption spectroscopy for monitoring the thickness of antiwear films from ZDDP
Authors: Fuller, MLS Fernandez, LR Massoumi, GR Lennard, WN Kasrai, M Bancroft, GM
Citation: Mls. Fuller et al., The use of X-ray absorption spectroscopy for monitoring the thickness of antiwear films from ZDDP, TRIBOL LETT, 8(4), 2000, pp. 187-192
Analysis of silicon-oxide-silicon nitride stacks by medium-energy ion scattering
Authors: Ladheer, D Ma, P Lennard, WN Mitchell, IV McNorgan, C
Citation: D. Ladheer et al., Analysis of silicon-oxide-silicon nitride stacks by medium-energy ion scattering, J VAC SCI A, 18(5), 2000, pp. 2503-2506
Characterization of silicon oxynitride films using ion beam analysis techniques
Authors: Walker, SR Davies, JA Mascher, P Wallace, SG Lennard, WN Massoumi, GR Elliman, RG Ophel, TR Timmers, H
Citation: Sr. Walker et al., Characterization of silicon oxynitride films using ion beam analysis techniques, NUCL INST B, 170(3-4), 2000, pp. 461-466
Merged beam measurement of the dissociative recombination of HCN+ and HNC+
Authors: Sheehan, C Le Padellec, A Lennard, WN Talbi, D Mitchell, JBA
Citation: C. Sheehan et al., Merged beam measurement of the dissociative recombination of HCN+ and HNC+, J PHYS B, 32(14), 1999, pp. 3347-3360
Improved stoichiometry measurements using He-4 elastic backscattering: experiment and simulation
Authors: Lennard, WN Massoumi, GR Simpson, TW Mitchell, IV
Citation: Wn. Lennard et al., Improved stoichiometry measurements using He-4 elastic backscattering: experiment and simulation, NUCL INST B, 152(2-3), 1999, pp. 370-376
Range distribution of P-31 ions implanted into Ge
Authors: Xia, H Rodriguez-Fernandez, L Lennard, WN Massoumi, GR Dimov, S Chryssoulis, S
Citation: H. Xia et al., Range distribution of P-31 ions implanted into Ge, NUCL INST B, 149(1-2), 1999, pp. 1-6
Quantitative determination of the bulk deuterium content of zirconium alloys using nuclear reaction analysis
Authors: Qin, Z Lennard, WN Zhang, CS Griffiths, K Norton, PR
Citation: Z. Qin et al., Quantitative determination of the bulk deuterium content of zirconium alloys using nuclear reaction analysis, J NUCL MAT, 264(1-2), 1999, pp. 228-233
Risultati: 1-10 |