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Results: 1-10 |
Results: 10
Amorphization of silicon during mechanical treatment of its powders: 1. Process kinetics
Authors: Streletskii, AN Leonov, AV Butyagin, PY
Citation: An. Streletskii et al., Amorphization of silicon during mechanical treatment of its powders: 1. Process kinetics, COLL J, 63(5), 2001, pp. 630-634
The influence of target temperature and photon assistance on the radiationdefect formation in low-fluence ion-implanted silicon
Authors: Barabanenkov, MY Gyulai, J Leonov, AV Mordkovich, VN Omelyanovskaya, NM Ryssel, H
Citation: My. Barabanenkov et al., The influence of target temperature and photon assistance on the radiationdefect formation in low-fluence ion-implanted silicon, NUCL INST B, 174(3), 2001, pp. 304-310
Dependence of defect formation in n-Si on the mass of ions and intensity of photo-excitation at low fluence ion implantation
Authors: Barabanenkov, MY Leonov, AV Mordkovich, VN Omel'yanovskaya, NM
Citation: My. Barabanenkov et al., Dependence of defect formation in n-Si on the mass of ions and intensity of photo-excitation at low fluence ion implantation, IAN FIZ, 64(4), 2000, pp. 721-725
Electronic micromirror
Authors: Lavrischev, SV Merkulova, SP Leonov, AV Merkulov, AL Lozovik, YE
Citation: Sv. Lavrischev et al., Electronic micromirror, PHYS SCR, 61(2), 2000, pp. 187-191
Analysis of the dynamics of organogenic substance concentrations and ratesof production-destruction processes in the waters of the northern part of Caspian Sea
Authors: Leonov, AV Sapozhnikov, VV
Citation: Av. Leonov et Vv. Sapozhnikov, Analysis of the dynamics of organogenic substance concentrations and ratesof production-destruction processes in the waters of the northern part of Caspian Sea, OKEANOLOGIY, 40(1), 2000, pp. 37-51
Distinctive features of the creation of radiation-induced defects in p-Si by photon-assisted low-dose ion implantation
Authors: Barabanenkov, MY Leonov, AV Mordkovich, VN Omelyanovskaya, NM
Citation: My. Barabanenkov et al., Distinctive features of the creation of radiation-induced defects in p-Si by photon-assisted low-dose ion implantation, SEMICONDUCT, 33(8), 1999, pp. 821-823
Effect of in situ photoexcitation of n-type Si as a result of ion implantation at low doses on the formation of radiation defects
Authors: Barabanenkov, MY Leonov, AV Mordkovich, VN Omel'yanovskaya, NM
Citation: My. Barabanenkov et al., Effect of in situ photoexcitation of n-type Si as a result of ion implantation at low doses on the formation of radiation defects, SEMICONDUCT, 33(5), 1999, pp. 504-507
GdTiGe (CeScSi-type structure) and GdTiGe (CeFeSi-type structure) as the coherent phases with different magnetic and hydrogenization properties
Authors: Tskhadadze, IA Chernyshev, VV Streletskii, AN Portnoy, VK Leonov, AV Sviridov, IA Telegina, IV Verbetskii, VN Seropegin, YD Morozkin, AV
Citation: Ia. Tskhadadze et al., GdTiGe (CeScSi-type structure) and GdTiGe (CeFeSi-type structure) as the coherent phases with different magnetic and hydrogenization properties, MATER RES B, 34(10-11), 1999, pp. 1773-1787
Crystallographic data of new ternary Sm5Ge4-type Gd2Sc3Ce4 and R2Sc3Si4 compounds (R=Sm, Gd-Tm)
Authors: Morozkin, AV Seropegin, YD Portnoy, VK Leonov, AV Sviridov, IA
Citation: Av. Morozkin et al., Crystallographic data of new ternary Sm5Ge4-type Gd2Sc3Ce4 and R2Sc3Si4 compounds (R=Sm, Gd-Tm), J ALLOY COM, 281(2), 1998, pp. L1-L2
Structure of Al50Ti50-xFex alloys prepared by mechanical alloying and subsequent annealing
Authors: Leonov, AV Fadeeva, VI Gladilina, OE Matyja, H
Citation: Av. Leonov et al., Structure of Al50Ti50-xFex alloys prepared by mechanical alloying and subsequent annealing, J ALLOY COM, 281(2), 1998, pp. 275-279
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