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Results: 1-25/44
Authors:
Feltin, E
Dalmasso, S
de Mierry, P
Beaumont, B
Lahreche, H
Bouille, A
Haas, H
Leroux, M
Gibart, P
Citation: E. Feltin et al., Green InGaN light-emitting diodes grown on silicon (111) by metalorganic vapor phase epitaxy, JPN J A P 2, 40(7B), 2001, pp. L738-L740
Authors:
Siozade, L
Leymarie, J
Disseix, P
Vasson, A
Mihailovic, M
Grandjean, N
Leroux, M
Massies, J
Citation: L. Siozade et al., Modelling of absorption and emission spectra of InxGa1-xN, MAT SCI E B, 82(1-3), 2001, pp. 71-73
Authors:
Schenk, HPD
Leroux, M
de Mierry, P
Laugt, M
Omnes, F
Gibart, P
Citation: Hpd. Schenk et al., Photoluminescence and absorption spectroscopy of silicon-doped InGaN layers, MAT SCI E B, 82(1-3), 2001, pp. 163-166
Authors:
Dalmasso, S
Damilano, B
Grandjean, N
Massies, J
Leroux, M
Reverchon, JL
Duboz, JY
Citation: S. Dalmasso et al., Optoelectronic characterization of blue InGaN/GaN LEDS grown by MBE, MAT SCI E B, 82(1-3), 2001, pp. 256-258
Authors:
Semond, F
Antoine-Vincent, N
Schnell, N
Malpuech, G
Leroux, M
Massies, J
Disseix, P
Leymarie, J
Vasson, A
Citation: F. Semond et al., Growth by molecular beam epitaxy and optical properties of a ten-period AlGaN/AlN distributed Bragg reflector on (111)Si, PHYS ST S-A, 183(1), 2001, pp. 163-167
Authors:
Aurand, A
Leymarie, J
Vasson, A
Mesrine, M
Massies, J
Leroux, M
Citation: A. Aurand et al., Investigation of the P-As substitution at GaAs/Ga0.51In0.49P interfaces byphotoluminescence under pressure, J APPL PHYS, 89(7), 2001, pp. 3775-3782
Authors:
Feltin, E
Beaumont, B
Laugt, M
de Mierry, P
Vennegues, P
Lahreche, H
Leroux, M
Gibart, P
Citation: E. Feltin et al., Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy, APPL PHYS L, 79(20), 2001, pp. 3230-3232
Temperature dependence of optical properties of h-GaN films studied by reflectivity and ellipsometry
Authors:
Siozade, L
Colard, S
Mihailovic, M
Leymarie, J
Vasson, A
Grandjean, N
Leroux, M
Massies, J
Citation: L. Siozade et al., Temperature dependence of optical properties of h-GaN films studied by reflectivity and ellipsometry, JPN J A P 1, 39(1), 2000, pp. 20-25
Authors:
Girouard, J
Forest, JC
Masse, J
Leroux, M
Bradburn, NC
Noblet, TC
Joynes, JO
Baum, J
Citation: J. Girouard et al., Multicenter evaluation of the Glucometer Elite XL Meter, an instrument specifically designed for use with neonates, DIABET CARE, 23(8), 2000, pp. 1149-1153
Authors:
Dalmasso, S
Damilano, B
Grandjean, N
Massies, J
Leroux, M
Reverchon, JL
Duboz, JY
Citation: S. Dalmasso et al., MBE grown InGaN quantum dots and quantum wells: effects of in-plane localization, THIN SOL FI, 380(1-2), 2000, pp. 195-197
Modelling of thermally detected optical absorption and luminescence of (In,Ga)N/GaN heterostructures
Authors:
Siozade, L
Leymarie, J
Disseix, P
Vasson, A
Mihailovic, M
Grandjean, N
Leroux, M
Massies, J
Citation: L. Siozade et al., Modelling of thermally detected optical absorption and luminescence of (In,Ga)N/GaN heterostructures, SOL ST COMM, 115(11), 2000, pp. 575-579
Authors:
Gallart, M
Morel, A
Taliercio, T
Lefebvre, P
Gil, B
Allegre, J
Mathieu, H
Grandjean, N
Leroux, M
Massies, J
Citation: M. Gallart et al., Scale effects on exciton localization and nonradiative processes in GaN/AlGaN quantum, PHYS ST S-A, 180(1), 2000, pp. 127-132
Authors:
Gallart, M
Taliercio, T
Lefebvre, P
Gil, B
Allegre, J
Mathieu, H
Grandjean, N
Leroux, M
Massies, J
Bigenwald, P
Citation: M. Gallart et al., Time-resolved spectroscopy of MBE-grown nitride based heterostructures, PHYS ST S-A, 178(1), 2000, pp. 101-105
Authors:
Lahreche, H
Vennegues, P
Tottereau, O
Laugt, M
Lorenzini, P
Leroux, M
Beaumont, B
Gibart, P
Citation: H. Lahreche et al., Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si(111), J CRYST GR, 217(1-2), 2000, pp. 13-25
Authors:
Larachi, F
Leroux, M
Hamoudi, S
Bernis, A
Sayari, A
Citation: F. Larachi et al., Solubility and infinite dilution activity coefficient for 5-chlorovanillinand 4-chloroguaiacol in water over the temperature range 280 to 363 K, J CHEM EN D, 45(2), 2000, pp. 404-408
Authors:
Schenk, HPD
Leroux, M
de Mierry, P
Citation: Hpd. Schenk et al., Luminescence and absorption in InGaN epitaxial layers and the van Roosbroeck-Shockley relation, J APPL PHYS, 88(3), 2000, pp. 1525-1534
Authors:
Lahreche, H
Leroux, M
Laugt, M
Vaille, M
Beaumont, B
Gibart, P
Citation: H. Lahreche et al., Buffer free direct growth of GaN on 6H-SiC by metalorganic vapor phase epitaxy, J APPL PHYS, 87(1), 2000, pp. 577-583
Authors:
Dalmasso, S
Feltin, E
de Mierry, P
Beaumont, B
Gibart, P
Leroux, M
Citation: S. Dalmasso et al., Green electroluminescent (Ga, In, Al)N LEDs grown on Si (111), ELECTR LETT, 36(20), 2000, pp. 1728-1730
Authors:
Vennegues, P
Benaissa, M
Beaumont, B
Feltin, E
De Mierry, P
Dalmasso, S
Leroux, M
Gibart, P
Citation: P. Vennegues et al., Pyramidal defects in metalorganic vapor phase epitaxial Mg doped GaN, APPL PHYS L, 77(6), 2000, pp. 880-882
Authors:
Leroux, M
Citation: M. Leroux, Improving air traffic control by proving new tools or by approving the joint human-machine system?, HUM FAC TR, 2000, pp. 315-334
Authors:
Grandjean, N
Leroux, M
Massies, J
Mesrine, M
Laugt, M
Citation: N. Grandjean et al., Molecular beam epitaxy of GaN under N-rich conditions using NH3, JPN J A P 1, 38(2A), 1999, pp. 618-621
Authors:
Murray, RP
Leroux, M
Sabga, E
Palatnick, W
Ludwig, L
Citation: Rp. Murray et al., Effect of point of care testing on length of stay in an adult emergency department, J EMERG MED, 17(5), 1999, pp. 811-814
Authors:
Siozade, L
Colard, S
Mihailovic, M
Leymarie, J
Vasson, A
Grandjean, N
Leroux, M
Massies, J
Citation: L. Siozade et al., Temperature dependence of hexagonal-GaN optical properties below the bandgap, PHYS ST S-B, 216(1), 1999, pp. 73-77
Authors:
Semond, F
Damilano, B
Vezian, S
Grandjean, N
Leroux, M
Massies, J
Citation: F. Semond et al., GaN on Si(111): From growth optimization to optical properties of quantum well structures, PHYS ST S-B, 216(1), 1999, pp. 101-105
Authors:
Ochalski, TJ
Gil, B
Bretagnon, T
Lefebvre, P
Grandjean, N
Massies, J
Leroux, M
Citation: Tj. Ochalski et al., Photoreflectance spectroscopy investigation of GaN-AlGaN quantum well structures, PHYS ST S-B, 216(1), 1999, pp. 221-225