Authors: Rodwell, MJW Urteaga, M Mathew, T Scott, D Mensa, D Lee, Q Guthrie, J Betser, Y Martin, SC Smith, RP Jaganathan, S Krishnan, S Long, SI Pullela, R Agarwal, B Bhattacharya, U Samoska, L Dahlstrom, M

Citation: Mjw. Rodwell et al., Submicron scaling of HBTs, IEEE DEVICE, 48(11), 2001, pp. 2606-2624

Authors: Krishnamurthy, K Vetury, R Keller, S Mishra, U Rodwell, MJW Long, SI

Citation: K. Krishnamurthy et al., Broadband GaAs MESFET and GaNHEMT resistive feedback power amplifiers, IEEE J SOLI, 35(9), 2000, pp. 1285-1292

Authors: Alinikula, P Choi, K Long, SI

Citation: P. Alinikula et al., Design of class E power amplifier with nonlinear parasitic output capacitance, IEEE CIR-II, 46(2), 1999, pp. 114-119

Authors: Choi, DK Long, SI

Citation: Dk. Choi et Si. Long, A physically based analytic model of EET Class-E power amplifiers - Designing for maximum PAE, IEEE MICR T, 47(9), 1999, pp. 1712-1720

Authors: Mensa, D Pullela, R Lee, Q Guthrie, J Martin, SC Smith, RP Jaganathan, S Mathew, T Agarwal, B Long, SI Rodwell, M

Citation: D. Mensa et al., 48-GHz digital IC's and 85-GHz baseband amplifiers using transferred-substrate HBT's, IEEE J SOLI, 34(9), 1999, pp. 1196-1203