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Results:
1-7
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Results: 7
Authors:
Zanelato, G
Pusep, YA
Galzerani, JC
Lubyshev, DI
Gonzalez-Borrero, PP
Citation: G. Zanelato et al., Raman study of the segregation of GaAs/AlAs heterostructures grown by molecular beam epitaxy, PHYSICA E, 10(4), 2001, pp. 587-592
Authors:
Fastenau, JM
Liu, WK
Fang, XM
Lubyshev, DI
Pelzel, RI
Yurasits, TR
Stewart, TR
Lee, JH
Li, SS
Tidrow, MZ
Citation: Jm. Fastenau et al., Commercial production of QWIP wafers by molecular beam epitaxy, INFR PHYS T, 42(3-5), 2001, pp. 407-415
Authors:
Moshegov, NT
Nordquist, CD
Cai, WZ
Mayer, TS
Lubyshev, DI
Miller, DL
Citation: Nt. Moshegov et al., Combined silicon, beryllium, and carbon tetrabromide single-port dopant source for molecular-beam epitaxy, J VAC SCI B, 19(4), 2001, pp. 1541-1545
Authors:
Zanelato, G
Pusep, YA
Galzerani, JC
Lubyshev, DI
Gonzalez-Borrero, PP
Citation: G. Zanelato et al., Study of the segregation process in GaAs/AlAs superlattices using Raman spectroscopy, J RAMAN SP, 32(10), 2001, pp. 857-861
Authors:
Ahrenkiel, RK
Ellingson, R
Metzger, W
Lubyshev, DI
Liu, WK
Citation: Rk. Ahrenkiel et al., Auger recombination in heavily carbon-doped GaAs, APPL PHYS L, 78(13), 2001, pp. 1879-1881
Authors:
Liu, WK
Lubyshev, DI
Specht, P
Zhao, R
Weber, ER
Gebauer, J
SpringThorpe, AJ
Streater, RW
Vijarnwannaluk, S
Songprakob, W
Zallen, R
Citation: Wk. Liu et al., Properties of carbon-doped low-temperature GaAs and InP grown by solid-source molecular-beam epitaxy using CBr4, J VAC SCI B, 18(3), 2000, pp. 1594-1597
Authors:
Cai, WZ
Lubyshev, DI
Miller, DL
Streater, RW
SpringThorpe, AJ
Citation: Wz. Cai et al., Heavily carbon-doped In0.53Ga0.47As on InP (001) substrate grown by solid source molecular beam epitaxy, J VAC SCI B, 17(3), 1999, pp. 1190-1194
Risultati:
1-7
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