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Results:
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Results: 3
Group-III nitride growth in production scale MOVPE systems
Authors:
Schineller, B Protzmann, H Luenenbuerger, M Heuken, M Lutsenko, EV Yablonskii, GP
Citation:
B. Schineller et al., Group-III nitride growth in production scale MOVPE systems, J PHYS IV, 11(PR3), 2001, pp. 1073-1077
Uniformity control of 3 inch GaN/InGaN layers grown in Planetary Reactors (R)
Authors:
Beccard, R Protzmann, H Luenenbuerger, M Schineller, B Heuken, M
Citation:
R. Beccard et al., Uniformity control of 3 inch GaN/InGaN layers grown in Planetary Reactors (R), MAT SCI E B, 80(1-3), 2001, pp. 50-53
Uniformity control of group-III nitrides grown on 5 x 3 inch Al2O3 substrates in Planetary Reactors((R))
Authors:
Protzmann, H Luenenbuerger, M Bremser, M Heuken, M Juergensen, H
Citation:
H. Protzmann et al., Uniformity control of group-III nitrides grown on 5 x 3 inch Al2O3 substrates in Planetary Reactors((R)), J CRYST GR, 221, 2000, pp. 629-634
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