Authors:
Lukyanchikova, NB
Petrichuk, MV
Garbar, NP
Simoen, E
Claeys, C
Citation: Nb. Lukyanchikova et al., Influence of the substrate voltage on the random telegraph signal parameters in submicron n-channel metal-oxide-semiconductor field-effect transistors under a constant inversion charge density, APPL PHYS A, 70(3), 2000, pp. 345-353
Authors:
Lukyanchikova, NB
Petrichuk, MV
Garbar, N
Simoen, E
Poyai, A
Claeys, C
Citation: Nb. Lukyanchikova et al., Impact of cobalt silicidation on the low-frequency noise behavior of shallow P-N junctions, IEEE ELEC D, 21(8), 2000, pp. 408-410
Authors:
Lukyanchikova, NB
Petrichuk, MV
Garbar, NP
Simoen, E
Claeys, C
Citation: Nb. Lukyanchikova et al., Non-trivial GR and 1/f noise generated in the p-Si layer of SOI and SOS MOSFETs near the inverted front or buried p-Si/SiO2 interface, SEMIC SCI T, 14(9), 1999, pp. 775-783
Authors:
Lukyanchikova, NB
Petrichuk, MV
Garbar, NP
Simoen, E
Claeys, C
Citation: Nb. Lukyanchikova et al., RTS capture kinetics and Coulomb blockade energy in submicron nMOSFETs under surface quantization conditions, MICROEL ENG, 48(1-4), 1999, pp. 185-188