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Results: 1-25 |
Results: 25
Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal-oxide-semiconductor devices
Authors: Cheng, KG Lee, JJ Chen, Z Shah, SA Hess, K Leburton, JP Lyding, JW
Citation: Kg. Cheng et al., Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal-oxide-semiconductor devices, J VAC SCI B, 19(4), 2001, pp. 1119-1123
Deuterium passivation of interface traps in MOS devices
Authors: Cheng, KG Hess, K Lyding, JW
Citation: Kg. Cheng et al., Deuterium passivation of interface traps in MOS devices, IEEE ELEC D, 22(9), 2001, pp. 441-443
A new technique to quantify deuterium passivation of interface traps in MOS devices
Authors: Cheng, K Hess, K Lyding, JW
Citation: K. Cheng et al., A new technique to quantify deuterium passivation of interface traps in MOS devices, IEEE ELEC D, 22(5), 2001, pp. 203-205
Separation of hot-carrier-induced interface trap creation and oxide chargetrapping in PMOSFETs studied by hydrogen/deuterium isotope effect
Authors: Cheng, KG Lee, JJ Lyding, JW Kim, YK Kim, YW Suh, KP
Citation: Kg. Cheng et al., Separation of hot-carrier-induced interface trap creation and oxide chargetrapping in PMOSFETs studied by hydrogen/deuterium isotope effect, IEEE ELEC D, 22(4), 2001, pp. 188-190
Deuterium pressure dependence of characteristics and hot-carrier reliability of CMOS devices
Authors: Cheng, KG Lee, J Chen, Z Shah, S Hess, K Lyding, JW Kim, YK Kim, YW Suh, KP
Citation: Kg. Cheng et al., Deuterium pressure dependence of characteristics and hot-carrier reliability of CMOS devices, MICROEL ENG, 56(3-4), 2001, pp. 353-358
Kinetic study on replacement of hydrogen by deuterium at (100)Si/SiO2 interfaces
Authors: Cheng, KG Hess, K Lyding, JW
Citation: Kg. Cheng et al., Kinetic study on replacement of hydrogen by deuterium at (100)Si/SiO2 interfaces, J APPL PHYS, 90(12), 2001, pp. 6536-6538
Deuterium isotope effect for AC and DC hot-carrier degradation of MOS transistors: A comparison study
Authors: Chen, Z Chen, KG Lee, JJ Lyding, JW Hess, K Chetlur, S
Citation: Z. Chen et al., Deuterium isotope effect for AC and DC hot-carrier degradation of MOS transistors: A comparison study, IEEE DEVICE, 48(4), 2001, pp. 813-815
On the mechanism of interface trap generation under nonuniform channel-hot-electron stress and uniform carrier-injection stress in metal-oxide-semiconductor field-effect transistors
Authors: Cheng, K Leburton, JP Hess, K Lyding, JW
Citation: K. Cheng et al., On the mechanism of interface trap generation under nonuniform channel-hot-electron stress and uniform carrier-injection stress in metal-oxide-semiconductor field-effect transistors, APPL PHYS L, 79(6), 2001, pp. 863-865
Atomic-level study of the robustness of the Si(100)-2x1 : H surface following exposure to ambient conditions
Authors: Hersam, MC Guisinger, NP Lyding, JW Thompson, DS Moore, JS
Citation: Mc. Hersam et al., Atomic-level study of the robustness of the Si(100)-2x1 : H surface following exposure to ambient conditions, APPL PHYS L, 78(7), 2001, pp. 886-888
Atom-resolved three-dimensional mapping of boron dopants in Si(100) by scanning tunneling microscopy
Authors: Liu, LQ Yu, JX Lyding, JW
Citation: Lq. Liu et al., Atom-resolved three-dimensional mapping of boron dopants in Si(100) by scanning tunneling microscopy, APPL PHYS L, 78(3), 2001, pp. 386-388
Hot-carrier-induced oxide charge trapping and interface trap creation in metal-oxide-semiconductor devices studied by hydrogen/deuterium isotope effect
Authors: Cheng, KG Lee, JJ Hess, K Lyding, JW
Citation: Kg. Cheng et al., Hot-carrier-induced oxide charge trapping and interface trap creation in metal-oxide-semiconductor devices studied by hydrogen/deuterium isotope effect, APPL PHYS L, 78(13), 2001, pp. 1882-1884
Silicon-based molecular nanotechnology
Authors: Hersam, MC Guisinger, NP Lyding, JW
Citation: Mc. Hersam et al., Silicon-based molecular nanotechnology, NANOTECHNOL, 11(2), 2000, pp. 70-76
Implications of atomic-level manipulation on the Si(100) surface: From enhanced CMOS reliability to molecular nanoelectronics
Authors: Hersam, MC Lee, J Guisinger, NP Lyding, JW
Citation: Mc. Hersam et al., Implications of atomic-level manipulation on the Si(100) surface: From enhanced CMOS reliability to molecular nanoelectronics, SUPERLATT M, 27(5-6), 2000, pp. 583-591
Application of high pressure deuterium annealing for improving the hot carrier reliability of CMOS transistors
Authors: Lee, JJ Cheng, KG Chen, Z Hess, K Lyding, JW Kim, YK Lee, HS Kim, YW Suh, KP
Citation: Jj. Lee et al., Application of high pressure deuterium annealing for improving the hot carrier reliability of CMOS transistors, IEEE ELEC D, 21(5), 2000, pp. 221-223
On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing
Authors: Chen, Z Hess, K Lee, JJ Lyding, JW Rosenbaum, E Kizilyalli, I Chetlur, S Huang, R
Citation: Z. Chen et al., On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing, IEEE ELEC D, 21(1), 2000, pp. 24-26
Isolating, imaging, and electrically characterizing individual organic molecules on the Si(100) surface with the scanning tunneling microscope
Authors: Hersam, MC Guisinger, NP Lyding, JW
Citation: Mc. Hersam et al., Isolating, imaging, and electrically characterizing individual organic molecules on the Si(100) surface with the scanning tunneling microscope, J VAC SCI A, 18(4), 2000, pp. 1349-1353
Cryogenic variable temperature ultrahigh vacuum scanning tunneling microscope
Authors: Foley, ET Kam, AF Lyding, JW
Citation: Et. Foley et al., Cryogenic variable temperature ultrahigh vacuum scanning tunneling microscope, REV SCI INS, 71(9), 2000, pp. 3428-3435
Experimental evidence of Si-H bond energy variation at SiO2-Si interface
Authors: Cheng, KG Lee, J Lyding, JW
Citation: Kg. Cheng et al., Experimental evidence of Si-H bond energy variation at SiO2-Si interface, APPL PHYS L, 77(21), 2000, pp. 3388-3390
Approach to enhance deuterium incorporation for improved hot carrier reliability in metal-oxide-semiconductor devices
Authors: Cheng, KG Lee, JJ Lyding, JW
Citation: Kg. Cheng et al., Approach to enhance deuterium incorporation for improved hot carrier reliability in metal-oxide-semiconductor devices, APPL PHYS L, 77(15), 2000, pp. 2358-2360
Theory of channel hot-carrier degradation in MOSFETs
Authors: Hess, K Register, LF McMahon, W Tuttle, B Aktas, O Ravaioli, U Lyding, JW Kizilyalli, IC
Citation: K. Hess et al., Theory of channel hot-carrier degradation in MOSFETs, PHYSICA B, 272(1-4), 1999, pp. 527-531
An approach for efficiently locating and electrically contacting nanostructures fabricated via UHV-STM lithography on Si(100)
Authors: Hersam, MC Abeln, GC Lyding, JW
Citation: Mc. Hersam et al., An approach for efficiently locating and electrically contacting nanostructures fabricated via UHV-STM lithography on Si(100), MICROEL ENG, 47(1-4), 1999, pp. 235-237
An alternative interpretation of hot electron interface degradation in NMOSFETs: Isotope results irreconcilable with major defect generation by holes?
Authors: Hess, K Lee, JJ Chen, Z Lyding, JW Kim, YK Kim, BS Lee, YH Kim, YW Suh, KP
Citation: K. Hess et al., An alternative interpretation of hot electron interface degradation in NMOSFETs: Isotope results irreconcilable with major defect generation by holes?, IEEE DEVICE, 46(9), 1999, pp. 1914-1916
The effect of deuterium passivation at different steps of CMOS processing on lifetime improvements of CMOS transistors
Authors: Lee, J Epstein, Y Berti, AC Huber, J Hess, K Lyding, JW
Citation: J. Lee et al., The effect of deuterium passivation at different steps of CMOS processing on lifetime improvements of CMOS transistors, IEEE DEVICE, 46(8), 1999, pp. 1812-1813
Direct observation of strained substrate in graded Si1-xGex/Si heterostructures
Authors: Tao, M Lyding, JW
Citation: M. Tao et Jw. Lyding, Direct observation of strained substrate in graded Si1-xGex/Si heterostructures, APPL PHYS L, 74(14), 1999, pp. 2020-2022
Approaches to nanofabrication on Si(100) surfaces: Selective area chemicalvapor deposition of metals and selective chemisorption of organic molecules
Authors: Abeln, GC Hersam, MC Thompson, DS Hwang, ST Choi, T Moore, JS Lyding, JW
Citation: Gc. Abeln et al., Approaches to nanofabrication on Si(100) surfaces: Selective area chemicalvapor deposition of metals and selective chemisorption of organic molecules, J VAC SCI B, 16(6), 1998, pp. 3874-3878
Risultati: 1-25 |