Authors: MA CLF DEEN MJ TAROF LE YU JCH

Citation: Clf. Ma et al., TEMPERATURE-DEPENDENCE OF BREAKDOWN VOLTAGES IN SEPARATE ABSORPTION, GRADING, CHARGE, AND MULTIPLICATION INP INGAAS AVALANCHE PHOTODIODES/, I.E.E.E. transactions on electron devices, 42(5), 1995, pp. 810-818

Authors: MA CLF DEEN MJ TAROF LE

Citation: Clf. Ma et al., DEVICE PARAMETERS EXTRACTION IN SEPARATE ABSORPTION, GRADING, CHARGE,AND MULTIPLICATION INP INGAAS AVALANCHE PHOTODIODES/, I.E.E.E. transactions on electron devices, 42(12), 1995, pp. 2070-2079

Authors: MA CLF DEEN MJ TAROF LE

Citation: Clf. Ma et al., MULTIPLICATION IN SEPARATE ABSORPTION, GRADING, CHARGE, AND MULTIPLICATION INP-INGAAS AVALANCHE PHOTODIODES, IEEE journal of quantum electronics, 31(11), 1995, pp. 2078-2089

Authors: MA CLF DEEN MJ HARDY RHS

Citation: Clf. Ma et al., EXCESS CURRENTS AS A RESULT OF TRAP-ASSISTED TUNNELING IN DOUBLE-BARRIER RESONANT-TUNNELING DIODES, Canadian journal of physics, 70(10-11), 1992, pp. 1005-1012