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Results: 1-13 |
Results: 13
CHARGE-CARRIER EFFECT ON THE MICROWAVE LOSSES OBSERVED ON TRAVELING-WAVE ELECTRODES USED IN ELECTROOPTIC MODULATORS
Authors: KHAZAEI HR BEROLO O JAMES R WANG WJ MAIGNE P YOUNG M OZARD K REEVES M GHANNOUCHI FM
Citation: Hr. Khazaei et al., CHARGE-CARRIER EFFECT ON THE MICROWAVE LOSSES OBSERVED ON TRAVELING-WAVE ELECTRODES USED IN ELECTROOPTIC MODULATORS, Microwave and optical technology letters, 17(4), 1998, pp. 236-241
ALLOYING EFFECTS ON THE CRITICAL LAYER THICKNESS IN INXGA1-XAS INP HETEROSTRUCTURES ANALYZED BY RAMAN-SCATTERING/
Authors: PIZANI PS BOSCHI TM LANCIOTTI F GROENEN J CARLES R MAIGNE P GENDRY M
Citation: Ps. Pizani et al., ALLOYING EFFECTS ON THE CRITICAL LAYER THICKNESS IN INXGA1-XAS INP HETEROSTRUCTURES ANALYZED BY RAMAN-SCATTERING/, Applied physics letters, 72(4), 1998, pp. 436-438
INFLUENCE OF GROWTH-CONDITIONS ON THE RESIDUAL STRAIN IN THICK METALORGANIC VAPOR-PHASE EPITAXY-GROWN INGAAS EPILAYERS
Authors: MAIGNE P
Citation: P. Maigne, INFLUENCE OF GROWTH-CONDITIONS ON THE RESIDUAL STRAIN IN THICK METALORGANIC VAPOR-PHASE EPITAXY-GROWN INGAAS EPILAYERS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(1), 1997, pp. 43-47
THE EVOLUTION OF ESAS SPACECRAFT CONTROL-SYSTEMS
Authors: BALDI A JONES M KAUFELER JF MAIGNE P
Citation: A. Baldi et al., THE EVOLUTION OF ESAS SPACECRAFT CONTROL-SYSTEMS, E.S.A. bulletin, (89), 1997, pp. 81-89
STRUCTURAL INVESTIGATION OF MOVPE GROWN INGAAS BUFFER LAYERS
Authors: MAIGNE P COULAS D
Citation: P. Maigne et D. Coulas, STRUCTURAL INVESTIGATION OF MOVPE GROWN INGAAS BUFFER LAYERS, Journal of crystal growth, 170(1-4), 1997, pp. 743-747
MEASUREMENT OF THE EXTENT OF STRAIN RELIEF IN INGAAS LAYERS GROWN UNDER TENSILE STRAIN ON INP(100) SUBSTRATES
Authors: MAIGNE P GENDRY M VENET T TAHRI Y HOLLINGER G
Citation: P. Maigne et al., MEASUREMENT OF THE EXTENT OF STRAIN RELIEF IN INGAAS LAYERS GROWN UNDER TENSILE STRAIN ON INP(100) SUBSTRATES, Applied physics letters, 69(5), 1996, pp. 682-684
RELAXATION IN TENSILE-STRAINED INALSB INSB HETEROSTRUCTURES/
Authors: MAIGNE P DHARMAWARDANA MWC LOCKWOOD DJ WEBB JB
Citation: P. Maigne et al., RELAXATION IN TENSILE-STRAINED INALSB INSB HETEROSTRUCTURES/, Journal of applied physics, 77(4), 1995, pp. 1466-1470
INTERFACIAL STUDIES IN SEMICONDUCTOR HETEROSTRUCTURES BY X-RAY-DIFFRACTION TECHNIQUES
Authors: BARIBEAU JM HEADRICK RL MAIGNE P
Citation: Jm. Baribeau et al., INTERFACIAL STUDIES IN SEMICONDUCTOR HETEROSTRUCTURES BY X-RAY-DIFFRACTION TECHNIQUES, Scanning microscopy, 8(4), 1994, pp. 813-826
MEASUREMENT OF RESIDUAL STRAIN IN INGAAS BUFFER LAYERS
Authors: MAIGNE P BARIBEAU JM
Citation: P. Maigne et Jm. Baribeau, MEASUREMENT OF RESIDUAL STRAIN IN INGAAS BUFFER LAYERS, Journal of applied physics, 76(3), 1994, pp. 1962-1964
EFFECT OF SUBSTRATE MISORIENTATION AN X-RAY RACKING CURVES FROM INGAAS RELAXED EPITAXIAL LAYERS
Authors: MAIGNE P BARIBEAU JM COULAS D DESRUISSEAUX C
Citation: P. Maigne et al., EFFECT OF SUBSTRATE MISORIENTATION AN X-RAY RACKING CURVES FROM INGAAS RELAXED EPITAXIAL LAYERS, Journal of applied physics, 75(3), 1994, pp. 1837-1839
STRAIN RELAXATION IN INALSB EPILAYERS GROWN IN INSB SUBSTRATES
Authors: MAIGNE P LOCKWOOD DJ WEBB JB
Citation: P. Maigne et al., STRAIN RELAXATION IN INALSB EPILAYERS GROWN IN INSB SUBSTRATES, Applied physics letters, 65(12), 1994, pp. 1543-1545
RAMAN-SCATTERING FROM IN1-XALXSB METASTABLE EPILAYERS
Authors: GNEZDILOV VP LOCKWOOD DJ WEBB JB MAIGNE P
Citation: Vp. Gnezdilov et al., RAMAN-SCATTERING FROM IN1-XALXSB METASTABLE EPILAYERS, Journal of applied physics, 74(11), 1993, pp. 6883-6887
EPITAXIAL TILT OF PARTIALLY RELAXED INGAAS LAYERS GROWN ON (100) GAASSUBSTRATES
Authors: MAIGNE P ROTH AP DESRUISSEAUX C COULAS D
Citation: P. Maigne et al., EPITAXIAL TILT OF PARTIALLY RELAXED INGAAS LAYERS GROWN ON (100) GAASSUBSTRATES, Canadian journal of physics, 70(10-11), 1992, pp. 838-842
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