Authors: DIEDERICH L KUTTEL OM AEBI P MAILLARDSCHALLER E FASEL R SCHLAPBACH L

Citation: L. Diederich et al., PHOTOELECTRON EMISSION FROM THE NEGATIVE ELECTRON-AFFINITY CAESIATED NATURAL DIAMOND(100) SURFACE, DIAMOND AND RELATED MATERIALS, 7(2-5), 1998, pp. 660-665

Authors: MAILLARDSCHALLER E KUTTEL OM GRONING P AEBI P SCHLAPBACH L

Citation: E. Maillardschaller et al., FORMATION OF AN ORIENTED BETA-SIC LAYER DURING THE INITIAL GROWTH-PHASE OF DIAMOND ON SILICON-(100), DIAMOND AND RELATED MATERIALS, 6(2-4), 1997, pp. 282-285

Authors: MAILLARDSCHALLER E KUTTEL OM GRONING P GRONING O AGOSTINO RG AEBI P SCHLAPBACH L WURZINGER P PONGRATZ P

Citation: E. Maillardschaller et al., LOCAL HETEROEPITAXY OF DIAMOND ON SILICON(100) - A STUDY OF THE INTERFACE STRUCTURE, Physical review. B, Condensed matter, 55(23), 1997, pp. 15895-15904

Authors: DIEDERICH L AEBI P KUTTEL OM MAILLARDSCHALLER E FASEL R SCHLAPBACH L

Citation: L. Diederich et al., SURFACE-STATE DISPERSION OF HYDROGENATED AND HYDROGEN-FREE DIAMOND(100) SURFACES DETERMINED BY ANGLE-RESOLVED PHOTOEMISSION, Surface science, 393(1-3), 1997, pp. 77-83

Authors: NUTZENADEL C KUTTEL OM DIEDERICH L MAILLARDSCHALLER E GRONING O SCHLAPBACH L

Citation: C. Nutzenadel et al., STM INVESTIGATIONS WITH ATOMIC-RESOLUTION ON THE (2X1) MONOHYDRIDE NATURAL DOPED DIAMOND (100) SURFACE, Surface science, 369(1-3), 1996, pp. 111-116

Authors: MAILLARDSCHALLER E KUETTEL OM SCHLAPBACH L

Citation: E. Maillardschaller et al., X-RAY PHOTOELECTRON DIFFRACTION OF THE SILICON-DIAMOND INTERFACE, Physica status solidi. a, Applied research, 153(2), 1996, pp. 415-429