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Results: 1-13 |
Results: 13
STABILITY AND BAND OFFSETS OF ALN GAN HETEROSTRUCTURES - IMPACT ON DEVICE PERFORMANCE/
Authors: MAJEWSKI JA ZANDLER G VOGL P
Citation: Ja. Majewski et al., STABILITY AND BAND OFFSETS OF ALN GAN HETEROSTRUCTURES - IMPACT ON DEVICE PERFORMANCE/, Semiconductor science and technology, 13(8A), 1998, pp. 90-92
PROSPECTS OF GA IN/AL-N NANOMETER DEVICES - ELECTRONIC-STRUCTURE, SCATTERING RATES, AND HIGH-FIELD TRANSPORT/
Authors: ZANDLER G MAJEWSKI JA STADELE M VOGL P COMPAGNONE F
Citation: G. Zandler et al., PROSPECTS OF GA IN/AL-N NANOMETER DEVICES - ELECTRONIC-STRUCTURE, SCATTERING RATES, AND HIGH-FIELD TRANSPORT/, Physica status solidi. b, Basic research, 204(1), 1997, pp. 133-135
STABILITY AND BAND OFFSETS OF POLAR GAN SIC(001) AND ALN/SIC(001) INTERFACES/
Authors: STADELE M MAJEWSKI JA VOGL P
Citation: M. Stadele et al., STABILITY AND BAND OFFSETS OF POLAR GAN SIC(001) AND ALN/SIC(001) INTERFACES/, Physical review. B, Condensed matter, 56(11), 1997, pp. 6911-6920
EXACT KOHN-SHAM EXCHANGE POTENTIAL IN SEMICONDUCTORS
Authors: STADELE M MAJEWSKI JA VOGL P GORLING A
Citation: M. Stadele et al., EXACT KOHN-SHAM EXCHANGE POTENTIAL IN SEMICONDUCTORS, Physical review letters, 79(11), 1997, pp. 2089-2092
GENERALIZED KOHN-SHAM SCHEMES AND THE BAND-GAP PROBLEM
Authors: SEIDL A GORLING A VOGL P MAJEWSKI JA LEVY M
Citation: A. Seidl et al., GENERALIZED KOHN-SHAM SCHEMES AND THE BAND-GAP PROBLEM, Physical review. B, Condensed matter, 53(7), 1996, pp. 3764-3774
FERROMAGNETIC SUPEREXCHANGE IN CR-BASED DILUTED MAGNETIC SEMICONDUCTORS
Authors: BLINOWSKI J KACMAN P MAJEWSKI JA
Citation: J. Blinowski et al., FERROMAGNETIC SUPEREXCHANGE IN CR-BASED DILUTED MAGNETIC SEMICONDUCTORS, Physical review. B, Condensed matter, 53(15), 1996, pp. 9524-9527
FERROMAGNETISM IN CR-BASED DILUTED MAGNETIC SEMICONDUCTORS
Authors: BLINOWSKI J KACMAN P MAJEWSKI JA
Citation: J. Blinowski et al., FERROMAGNETISM IN CR-BASED DILUTED MAGNETIC SEMICONDUCTORS, Journal of crystal growth, 159(1-4), 1996, pp. 972-975
STABILITY AND BAND OFFSETS OF HETEROVALENT SIC GAN INTERFACES/
Authors: STADELE M MAJEWSKI JA VOGL P
Citation: M. Stadele et al., STABILITY AND BAND OFFSETS OF HETEROVALENT SIC GAN INTERFACES/, Acta Physica Polonica. A, 88(5), 1995, pp. 917-920
FERROMAGNETISM IN CR-BASED DILUTED MAGNETIC SEMICONDUCTORS
Authors: BLINOWSKI J KACMAN P MAJEWSKI JA
Citation: J. Blinowski et al., FERROMAGNETISM IN CR-BASED DILUTED MAGNETIC SEMICONDUCTORS, Acta Physica Polonica. A, 88(4), 1995, pp. 683-686
OPTICAL AND ELECTRONIC-PROPERTIES OF CRYSTALLINE POLY(PARA-PHENYLENE)BY FIRST-PRINCIPLES CALCULATIONS AND EXPERIMENTAL RESULTS
Authors: AMBROSCHDRAXL C MAJEWSKI JA VOGL P LEISING G ABT R AICHHOLZER KD
Citation: C. Ambroschdraxl et al., OPTICAL AND ELECTRONIC-PROPERTIES OF CRYSTALLINE POLY(PARA-PHENYLENE)BY FIRST-PRINCIPLES CALCULATIONS AND EXPERIMENTAL RESULTS, Synthetic metals, 69(1-3), 1995, pp. 411-414
FIRST-PRINCIPLES STUDIES OF THE STRUCTURAL AND OPTICAL-PROPERTIES OF CRYSTALLINE POLY(PARA-PHENYLENE)
Authors: AMBROSCHDRAXL C MAJEWSKI JA VOGL P LEISING G
Citation: C. Ambroschdraxl et al., FIRST-PRINCIPLES STUDIES OF THE STRUCTURAL AND OPTICAL-PROPERTIES OF CRYSTALLINE POLY(PARA-PHENYLENE), Physical review. B, Condensed matter, 51(15), 1995, pp. 9668-9676
QUANTITATIVE INFRARED IMAGING FOR THE MEASUREMENT OF DOPANT DISTRIBUTION IN GALLIUM-ARSENIDE
Authors: MAJEWSKI JA MATTHIESEN DH
Citation: Ja. Majewski et Dh. Matthiesen, QUANTITATIVE INFRARED IMAGING FOR THE MEASUREMENT OF DOPANT DISTRIBUTION IN GALLIUM-ARSENIDE, Journal of crystal growth, 137(1-2), 1994, pp. 249-254
HOW TO CONVERT GROUP-IV SEMICONDUCTORS INTO LIGHT EMITTERS
Authors: VOGL P RIEGER MM MAJEWSKI JA ABSTREITER G
Citation: P. Vogl et al., HOW TO CONVERT GROUP-IV SEMICONDUCTORS INTO LIGHT EMITTERS, Physica scripta. T, T49B, 1993, pp. 476-482
Risultati: 1-13 |