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Results: 1-9 |
Results: 9
DIELECTRIC-ASSISTED TRILAYER LIFT-OFF PROCESS FOR IMPROVED METAL DEFINITION
Authors: RYAN RW KOPF RF HAMM RA MALIK RJ MASAITIS R OPILA R
Citation: Rw. Ryan et al., DIELECTRIC-ASSISTED TRILAYER LIFT-OFF PROCESS FOR IMPROVED METAL DEFINITION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2759-2762
ECR PLASMA ETCH FABRICATION OF C-DOPED BASE INGAAS INP DHBT STRUCTURES - A COMPARISON OF CH4/H-2/AR VS BCL3/N-2 PLASMA ETCH CHEMISTRIES/
Authors: KOPF RF HAMM RA MALIK RJ RYAN RW GEVA M BURM J TATE A
Citation: Rf. Kopf et al., ECR PLASMA ETCH FABRICATION OF C-DOPED BASE INGAAS INP DHBT STRUCTURES - A COMPARISON OF CH4/H-2/AR VS BCL3/N-2 PLASMA ETCH CHEMISTRIES/, Journal of electronic materials, 27(2), 1998, pp. 69-72
METALLURGICAL STABILITY OF OHMIC CONTACTS ON THIN BASE INP INGAAS/INPHBTS/
Authors: CHOR EF MALIK RJ HAMM RA RYAN R
Citation: Ef. Chor et al., METALLURGICAL STABILITY OF OHMIC CONTACTS ON THIN BASE INP INGAAS/INPHBTS/, IEEE electron device letters, 17(2), 1996, pp. 62-64
TEMPERATURE AND MODULATION CHARACTERISTICS OF RESONANT-CAVITY LIGHT-EMITTING-DIODES
Authors: SCHUBERT EF HUNT NEJ MALIK RJ MICOVIC M MILLER DL
Citation: Ef. Schubert et al., TEMPERATURE AND MODULATION CHARACTERISTICS OF RESONANT-CAVITY LIGHT-EMITTING-DIODES, Journal of lightwave technology, 14(7), 1996, pp. 1721-1729
KA-BAND MONOLITHIC INGAAS INP HBT VCOS IN CPW STRUCTURE/
Authors: LIN J CHEN YK HUMPHREY DA HAMM RA MALIK RJ TATE A KOPF RF RYAN RW
Citation: J. Lin et al., KA-BAND MONOLITHIC INGAAS INP HBT VCOS IN CPW STRUCTURE/, IEEE microwave and guided wave letters, 5(11), 1995, pp. 379-381
MEASUREMENT OF THE ELECTRON IONIZATION COEFFICIENT AT LOW ELECTRIC-FIELDS IN INGAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS
Authors: CANALI C FORZAN C NEVIANI A VENDRAME L ZANONI E HAMM RA MALIK RJ CAPASSO F CHANDRASEKHAR S
Citation: C. Canali et al., MEASUREMENT OF THE ELECTRON IONIZATION COEFFICIENT AT LOW ELECTRIC-FIELDS IN INGAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS, Applied physics letters, 66(9), 1995, pp. 1095-1097
HIGHLY EFFICIENT LIGHT-EMITTING-DIODES WITH MICROCAVITIES
Authors: SCHUBERT EF HUNT NEJ MICOVIC M MALIK RJ SIVCO DL CHO AY ZYDZIK GJ
Citation: Ef. Schubert et al., HIGHLY EFFICIENT LIGHT-EMITTING-DIODES WITH MICROCAVITIES, Science, 265(5174), 1994, pp. 943-945
QUANTUM-WELL LASERS WITH CARBON-DOPED CLADDING LAYERS GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY
Authors: MICOVIC M EVALDSSON P GEVA M TAYLOR GW VANG T MALIK RJ
Citation: M. Micovic et al., QUANTUM-WELL LASERS WITH CARBON-DOPED CLADDING LAYERS GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY, Applied physics letters, 64(4), 1994, pp. 411-413
PROPERTIES AND APPLICATIONS OF CARBON-DOPED GAAS AND ALXGA1-XAS LAYERS GROWN BY MBE WITH A PYROLYTIC-GRAPHITE FILAMENT
Authors: MALIK RJ NAGLE J MICOVIC M RYAN RW HARRIS T GEVA M HOPKINS LC VANDENBERG J HULL R KOPF RF ANAND Y BRADDOCK WD
Citation: Rj. Malik et al., PROPERTIES AND APPLICATIONS OF CARBON-DOPED GAAS AND ALXGA1-XAS LAYERS GROWN BY MBE WITH A PYROLYTIC-GRAPHITE FILAMENT, Journal of crystal growth, 127(1-4), 1993, pp. 686-689
Risultati: 1-9 |