Authors:
MAMUTIN VV
ZHMERIK VN
SHUBINA TV
TOROPOV AA
LEBEDEV AV
VEKSHIN VA
IVANOV SV
KOPEV PS
Citation: Vv. Mamutin et al., OF GAN BY MOLECULAR-BEAM EPITAXY WITH ACTIVATION OF THE NITROGEN BY ACAPACITIVE RF MAGNETRON DISCHARGE, Technical physics letters, 24(6), 1998, pp. 467-469
Citation: Ov. Smolskii et al., STUDY OF THE FORMATION PROCESS OF SI CEO2 STRUCTURE BOUNDARY BY THE X-RAY PHOTOELECTRON-SPECTROSCOPY/, Pis'ma v Zurnal tehniceskoj fiziki, 22(3), 1996, pp. 23-28
Authors:
SMOLSKII OV
MAMUTIN VV
KARTENKO NF
DENISOV DV
KOPEV PS
MELEKH BT
Citation: Ov. Smolskii et al., CHARACTERISTICS OF EPITAXIAL-GROWTH OF CE O2 FILMS ON SILICON SUBSTRATES, Pis'ma v Zurnal tehniceskoj fiziki, 22(1), 1996, pp. 68-73
Citation: Vv. Mamutin, GROWTH-MECHANISM OF DYBA2CU3OX SUPERCONDUCTING THIN-FILMS GROWN BY COEVAPORATION MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES AND GROWTH-RATES, Journal of crystal growth, 153(3-4), 1995, pp. 140-145