Authors:
HARELAND SA
MANASSIAN M
SHIH WK
JALLEPALLI S
WANG HH
CHINDALORE GL
TASCH AF
MAZIAR CM
Citation: Sa. Hareland et al., COMPUTATIONALLY EFFICIENT MODELS FOR QUANTIZATION EFFECTS IN MOS ELECTRON AND HOLE ACCUMULATION LAYERS, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1487-1493
Authors:
MORRIS SJ
YANG SH
LIM DH
PARK C
KLEIN KM
MANASSIAN M
TASCH AF
Citation: Sj. Morris et al., AN ACCURATE AND EFFICIENT MODEL FOR BORON IMPLANTS THROUGH THIN OXIDELAYERS INTO SINGLE-CRYSTAL SILICON, IEEE transactions on semiconductor manufacturing, 8(4), 1995, pp. 408-413