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Authors: HARELAND SA MANASSIAN M SHIH WK JALLEPALLI S WANG HH CHINDALORE GL TASCH AF MAZIAR CM
Citation: Sa. Hareland et al., COMPUTATIONALLY EFFICIENT MODELS FOR QUANTIZATION EFFECTS IN MOS ELECTRON AND HOLE ACCUMULATION LAYERS, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1487-1493

Authors: MORRIS SJ YANG SH LIM DH PARK C KLEIN KM MANASSIAN M TASCH AF
Citation: Sj. Morris et al., AN ACCURATE AND EFFICIENT MODEL FOR BORON IMPLANTS THROUGH THIN OXIDELAYERS INTO SINGLE-CRYSTAL SILICON, IEEE transactions on semiconductor manufacturing, 8(4), 1995, pp. 408-413
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