AN ACCURATE AND EFFICIENT MODEL FOR BORON IMPLANTS THROUGH THIN OXIDELAYERS INTO SINGLE-CRYSTAL SILICON

This paper presents a computationally efficient and accurate depth pro file model for boron implants through a thin (0-50 nm) oxide layer int o single-crystal silicon. This is the first reported model with explic it dependence on all of the key implant parameters, which include oxid e thickness, implant energy, dose, tilt angle, and rotation angle. The detailed effects of thin oxide layers on the tilt and rotation angle, as well as the dose and energy dependencies of boron profiles, have b een studied as the basis of the model. It is shown that this model is able to predict the profile dependencies very well, including subtle, unexpected behavior of the implanted profiles for certain implant cond itions. The model has been implemented into SUPREM 3, SUPREM 4, and FL OOPS in order to demonstrate its capabilities.