Authors:
FERLETCAVROIS V
MARCANDELLA C
MUSSEAU O
LERAY JL
PELLOIE JL
MARTIN F
KOLEV S
PASQUET D
Citation: V. Ferletcavrois et al., HIGH-FREQUENCY PERFORMANCES OF A PARTIALLY DEPLETED 0.18-MU-M SOI CMOS TECHNOLOGY AT LOW SUPPLY VOLTAGE - INFLUENCE OF PARASITIC ELEMENTS/, IEEE electron device letters, 19(7), 1998, pp. 265-267
Authors:
GRUBER O
PAILLET P
MUSSEAU O
MARCANDELLA C
ASPAR B
AUBERTONHERVE AJ
Citation: O. Gruber et al., PHYSICAL CHARACTERIZATION OF ELECTRON TRAPPING IN UNIBOND(R) OXIDES, IEEE transactions on nuclear science, 45(3), 1998, pp. 1402-1406