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Authors: FERLETCAVROIS V MARCANDELLA C MUSSEAU O LERAY JL PELLOIE JL MARTIN F KOLEV S PASQUET D
Citation: V. Ferletcavrois et al., HIGH-FREQUENCY PERFORMANCES OF A PARTIALLY DEPLETED 0.18-MU-M SOI CMOS TECHNOLOGY AT LOW SUPPLY VOLTAGE - INFLUENCE OF PARASITIC ELEMENTS/, IEEE electron device letters, 19(7), 1998, pp. 265-267

Authors: GRUBER O PAILLET P MUSSEAU O MARCANDELLA C ASPAR B AUBERTONHERVE AJ
Citation: O. Gruber et al., PHYSICAL CHARACTERIZATION OF ELECTRON TRAPPING IN UNIBOND(R) OXIDES, IEEE transactions on nuclear science, 45(3), 1998, pp. 1402-1406
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