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Results: 3
FORMATION EFFICIENCY OF THE THERMOSTABLE RECOMBINATION CENTERS IN IRRADIATED SILICON P-N STRUCTURES
Authors: KORSHUNOV FP ZHDANOVICH NE MARCHENKO IG TROSHCHINSKY VT
Citation: Fp. Korshunov et al., FORMATION EFFICIENCY OF THE THERMOSTABLE RECOMBINATION CENTERS IN IRRADIATED SILICON P-N STRUCTURES, Doklady Akademii nauk BSSR, 40(5), 1996, pp. 49-53
CHARACTERISTICS OF ELECTRON-BOMBARDED P-N-JUNCTIONS IN THE AVALANCHE-BREAKDOWN REGION
Authors: KORSHUNOV FP LASTOVSKII SB MARCHENKO IG
Citation: Fp. Korshunov et al., CHARACTERISTICS OF ELECTRON-BOMBARDED P-N-JUNCTIONS IN THE AVALANCHE-BREAKDOWN REGION, Semiconductors, 28(3), 1994, pp. 292-294
ELECTRON RADIATION-STIMULATED CHARGE-EXCH ANGE OF DEEP LEVELS IN SI DUE TO CUMULATIVE BREAKDOWN
Authors: LASTOVSKII SB MARCHENKO IG
Citation: Sb. Lastovskii et Ig. Marchenko, ELECTRON RADIATION-STIMULATED CHARGE-EXCH ANGE OF DEEP LEVELS IN SI DUE TO CUMULATIVE BREAKDOWN, Pis'ma v Zurnal tehniceskoj fiziki, 20(4), 1994, pp. 12-15
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