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Results: 1-10 |
Results: 10
ROLE OF IONIC PROCESSES IN DEGRADATION OF WIDE-GAP II-VI SEMICONDUCTOR-MATERIALS
Authors: BORKOVSKAYA LV DZHYMAEV BR KORSUNSKAYA NE MARKEVICH IV SINGAEVSKY AF SHEINKMAN MK
Citation: Lv. Borkovskaya et al., ROLE OF IONIC PROCESSES IN DEGRADATION OF WIDE-GAP II-VI SEMICONDUCTOR-MATERIALS, Acta Physica Polonica. A, 94(2), 1998, pp. 255-259
EFFECT OF THE SHAPE OF THE FUNDAMENTAL ABSORPTION-EDGE ON THE SHAPE OF THE GREEN-LUMINESCENCE SPECTRUM OF CDS CRYSTALS
Authors: BORKOVSKAYA LV DZHUMAEV BR KORSUNSKAYA NE MARKEVICH IV SINGAEVSKII AF
Citation: Lv. Borkovskaya et al., EFFECT OF THE SHAPE OF THE FUNDAMENTAL ABSORPTION-EDGE ON THE SHAPE OF THE GREEN-LUMINESCENCE SPECTRUM OF CDS CRYSTALS, Semiconductors, 30(4), 1996, pp. 400-402
NATURE OF THE METASTABLE CENTERS RESPONSIBLE FOR THE ANOMALOUS TEMPERATURE-DEPENDENCE OF THE CONDUCTIVITY OF THE (0001) FACE OF CDS CRYSTALS
Authors: DROZDOVA IA KORSUNSKAYA NE MARKEVICH IV SHEINKMAN MK
Citation: Ia. Drozdova et al., NATURE OF THE METASTABLE CENTERS RESPONSIBLE FOR THE ANOMALOUS TEMPERATURE-DEPENDENCE OF THE CONDUCTIVITY OF THE (0001) FACE OF CDS CRYSTALS, Semiconductors, 30(2), 1996, pp. 181-182
PHOTOSENSITIVITY PROFILE FORMATION IN BULK CDS SINGLE-CRYSTALS BY THEACTION OF AN EXTERNAL ELECTRIC-FIELD
Authors: KISLYUK VV KORSUNSKAYA NE MARKEVICH IV PEKAR GS SINGAEVSKII AF SHEINKMAN MK
Citation: Vv. Kislyuk et al., PHOTOSENSITIVITY PROFILE FORMATION IN BULK CDS SINGLE-CRYSTALS BY THEACTION OF AN EXTERNAL ELECTRIC-FIELD, Semiconductors, 30(10), 1996, pp. 986-987
EPR-SPECTRA OF SMALL DONORS RESPONSIBLE F OR ELECTRON-STIMULATED REACTION OF DEFECTS IN CDS CRYSTALS
Authors: BARAN NP DZHUMAEV BR KORSUNSKAYA NE MARKEVICH IV KHOMENKOVA LY SHULGA EP
Citation: Np. Baran et al., EPR-SPECTRA OF SMALL DONORS RESPONSIBLE F OR ELECTRON-STIMULATED REACTION OF DEFECTS IN CDS CRYSTALS, Fizika tverdogo tela, 38(6), 1996, pp. 1735-1741
MECHANISM FOR FORMATION OF CONDUCTING CHANNELS IN CDS CRYSTALS BY AN ELECTRIC-FIELD
Authors: DROZDOVA IA EMBERGENOV BE KORSUNSKAYA NE MARKEVICH IV SINGAEVSKII AF
Citation: Ia. Drozdova et al., MECHANISM FOR FORMATION OF CONDUCTING CHANNELS IN CDS CRYSTALS BY AN ELECTRIC-FIELD, Semiconductors, 29(3), 1995, pp. 277-280
LARGE CDS SINGLE-CRYSTALS WITH A HIGH OPTICAL STRENGTH
Authors: KLIMOVA NV KORSUNSKAYA NE MARKEVICH IV PEKAR GS SINGAEVSKY AF
Citation: Nv. Klimova et al., LARGE CDS SINGLE-CRYSTALS WITH A HIGH OPTICAL STRENGTH, Materials science & engineering. B, Solid-state materials for advanced technology, 34(1), 1995, pp. 12-17
NON-ACTIVATION DONOR MOVEMENT UNDER THE U LTRASOUND IN CDS CRYSTALS
Authors: BORKOVSKAYA LV DZHUMAEV BR DROZDOVA IA KORSUNSKAYA NE MARKEVICH IV SINGAEVSKII AF SHEINKMAN MK
Citation: Lv. Borkovskaya et al., NON-ACTIVATION DONOR MOVEMENT UNDER THE U LTRASOUND IN CDS CRYSTALS, Fizika tverdogo tela, 37(9), 1995, pp. 2745-2748
CONDUCTIVITY ANISOTROPY INDUCED BY AN ELECTRIC-FIELD IN CDS CRYSTALS
Authors: DROZDOVA IA KORSUNSKAYA NE MARKEVICH IV
Citation: Ia. Drozdova et al., CONDUCTIVITY ANISOTROPY INDUCED BY AN ELECTRIC-FIELD IN CDS CRYSTALS, Semiconductors, 28(2), 1994, pp. 215-216
INFLUENCE OF MOBILE DEFECTS ON THE CHARACTERISTICS OF A METAL-SEMICONDUCTOR CONTACT IN THE CASE OF CDS CRYSTALS
Authors: DROZDOVA IA EMBERGENOV B KORSUNSKAYA NE MARKEVICH IV
Citation: Ia. Drozdova et al., INFLUENCE OF MOBILE DEFECTS ON THE CHARACTERISTICS OF A METAL-SEMICONDUCTOR CONTACT IN THE CASE OF CDS CRYSTALS, Semiconductors, 27(4), 1993, pp. 372-373
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