Authors: YABLONSKII GP GURSKII AL LUTSENKO EV MARKO IP SCHINELLER B GUTTZEIT A SCHON O HEUKEN M HEIME K BECCARD R SCHMITZ D JUERGENSEN H

Citation: Gp. Yablonskii et al., OPTICAL-PROPERTIES AND RECOMBINATION MECHANISMS IN GAN AND GAN-MG GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of electronic materials, 27(4), 1998, pp. 222-228

Authors: GURSKII AL MARKO IP LUTSENKO EV YABLONSKII GP KALISCH H HAMADEH H HEUKEN M

Citation: Al. Gurskii et al., HIGH-TEMPERATURE OPTICALLY PUMPED LASING IN ZNMGSSE ZNSE HETEROSTRUCTURES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/, Applied physics letters, 73(11), 1998, pp. 1496-1498

Authors: YABLONSKII GP GURSKII AL LUTSENKO EV MARKO IP HAMADEH H SOLLNER J TAUDT W HEUKEN M

Citation: Gp. Yablonskii et al., OPTICALLY-PUMPED LASING OF DOPED ZNSE EPITAXIAL LAYERS GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY, Physica status solidi. a, Applied research, 159(2), 1997, pp. 543-557

Authors: GURSKII AL MARKO IP YUVCHENKO VN YABLONSKII GP HAMADEH H TAUDT W SOLLNER J KALISCH H HEUKEN M

Citation: Al. Gurskii et al., NEAR-BAND-EDGE PHOTOLUMINESCENCE OF MOVPE-GROWN UNDOPED AND NITROGEN-DOPED ZNSE, Journal of crystal growth, 174(1-4), 1997, pp. 757-762

Authors: YABLONSKII GP GURSKII AL LUCENKO EV MARKO IP HAMADEH H TAUDT W SOLLNER J KALISCH H HEUKEN M

Citation: Gp. Yablonskii et al., OPTICAL-PUMPED LASING OF DOPED ZNSE EPILAYERS GROWN BY MOVPE, Journal of crystal growth, 174(1-4), 1997, pp. 763-767