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Results: 1-13 |
Results: 13

Authors: MARS DE ROSNER SJ KANEKO Y NAKAGAWA S TAKEUCHI T YAMADA N
Citation: De. Mars et al., GROWTH OF VERTICAL-CAVITY SURFACE-EMITTING LASER MATERIAL ON (311)B GAAS BY MBE, Journal of crystal growth, 175, 1997, pp. 365-371

Authors: BABIC DI PIPREK J STREUBEL K MIRIN RP MARGALIT NM MARS DE BOWERS JE HU EL
Citation: Di. Babic et al., DESIGN AND ANALYSIS OF DOUBLE-FUSED 1.55-MU-M VERTICAL-CAVITY LASERS, IEEE journal of quantum electronics, 33(8), 1997, pp. 1369-1383

Authors: MARGALIT NM BABIC DI STREUBEL K MIRIN RP MARS DE BOWERS JE HU EL
Citation: Nm. Margalit et al., LATERALLY OXIDIZED LONG-WAVELENGTH CW VERTICAL-CAVITY LASERS, Applied physics letters, 69(4), 1996, pp. 471-472

Authors: YAMADA N KANEKO Y NAKAGAWA S MARS DE TAKEUCHI T MIKOSHIBA N
Citation: N. Yamada et al., CONTINUOUS-WAVE OPERATION OF A BLUE VERTICAL-CAVITY SURFACE-EMITTING LASER-BASED ON 2ND-HARMONIC GENERATION, Applied physics letters, 68(14), 1996, pp. 1895-1897

Authors: BABIC DI STREUBLE K MIRIN RP MARGALIT NM BOWERS JE HU EL MARS DE YANG L CAREY K
Citation: Di. Babic et al., ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF 1.54-MU-UM VERTICAL-CAVITY LASERS, IEEE photonics technology letters, 7(11), 1995, pp. 1225-1227

Authors: NAKAGAWA S MARS DE YAMADA N
Citation: S. Nakagawa et al., GENERATING SHORT-WAVELENGTH LIGHT USING A VERTICAL-CAVITY LASER STRUCTURE, HEWLETT-PAC, 46(1), 1995, pp. 72-75

Authors: KANEKO Y NAKAGAWA S TAKEUCHI T MARS DE YAMADA N MIKOSHIBA N
Citation: Y. Kaneko et al., INGAAS GAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS ON (311)B GAAS SUBSTRATE/, Electronics Letters, 31(10), 1995, pp. 805-806

Authors: NAKAGAWA S YAMADA N MIKOSHIBA N MARS DE
Citation: S. Nakagawa et al., 2ND-HARMONIC GENERATION FROM GAAS ALAS VERTICAL-CAVITY/, Applied physics letters, 66(17), 1995, pp. 2159-2161

Authors: HOUNG YM TAN MRT LIANG BW WANG SY MARS DE
Citation: Ym. Houng et al., IN-SITU THICKNESS MONITORING AND CONTROL FOR HIGHLY REPRODUCIBLE GROWTH OF DISTRIBUTED BRAGG REFLECTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1221-1224

Authors: HOUNG YM TAN MRT LIANG BW WANG SY YANG L MARS DE
Citation: Ym. Houng et al., INGAAS(0.98 MU-M) GAAS VERTICAL-CAVITY SURFACE-EMITTING LASER GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 136(1-4), 1994, pp. 216-220

Authors: YANG L DRAVING SD MARS DE TAN MRT
Citation: L. Yang et al., A 50 GHZ BROAD-BAND MONOLITHIC GAAS ALAS RESONANT-TUNNELING DIODE TRIGGER-CIRCUIT/, IEEE journal of solid-state circuits, 29(5), 1994, pp. 585-595

Authors: COLOMB CM STOCKMAN SA GARDNER NF CURTIS AP STILLMAN GE LOW TS MARS DE DAVITO DB
Citation: Cm. Colomb et al., ZERO-FIELD TIME-OF-FLIGHT CHARACTERIZATION OF MINORITY-CARRIER TRANSPORT IN HEAVILY CARBON-DOPED GAAS, Journal of applied physics, 73(11), 1993, pp. 7471-7477

Authors: RAM RJ YANG L NAUKA K HOUNG YM LUDOWISE M MARS DE DUDLEY JJ WANG SY
Citation: Rj. Ram et al., ANALYSIS OF WATER FUSING FOR 1.3 MU-M VERTICAL-CAVITY SURFACE-EMITTING LASERS, Applied physics letters, 62(20), 1993, pp. 2474-2476
Risultati: 1-13 |