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Results:
1-7
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Results: 7
Authors:
MARSAL LF
PALLARES J
CORREIG X
ORPELLA A
BARDES D
ALCUBILLA R
Citation: Lf. Marsal et al., CURRENT TRANSPORT MECHANISMS IN N-TYPE AMORPHOUS SILICON-CARBON ON P-TYPE CRYSTALLINE SILICON (A-SI0.8C0.2-H C-SI) HETEROJUNCTION DIODES/, Semiconductor science and technology (Print), 13(10), 1998, pp. 1148-1153
DISTRIBUTION OF RECOMBINATION CURRENTS IN THE SPACE-CHARGE REGION OF HETEROSTRUCTURE BIPOLAR-DEVICES
Authors:
PALLARES J
MARSAL LF
CORREIG X
CALDERER J
ALCUBILLA R
Citation: J. Pallares et al., DISTRIBUTION OF RECOMBINATION CURRENTS IN THE SPACE-CHARGE REGION OF HETEROSTRUCTURE BIPOLAR-DEVICES, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 54-61
Authors:
MARSAL LF
PALLARES J
CORREIG X
DOMINGUEZ M
BARDES D
CALDERER J
ALCUBILLA R
Citation: Lf. Marsal et al., ELECTRICAL-PROPERTIES OF PECVD AMORPHOUS SILICON-CARBON ALLOYS FROM AMORPHOUS-CRYSTALLINE HETEROJUNCTIONS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1555-1558
Authors:
PALLARES J
MARSAL LF
CORREIG X
CALDERER J
ALCUBILLA R
Citation: J. Pallares et al., SPACE-CHARGE RECOMBINATION IN P-N-JUNCTIONS WITH A DISCRETE AND CONTINUOUS TRAP DISTRIBUTION, Solid-state electronics, 41(1), 1997, pp. 17-23
Authors:
MARSAL LF
PALLARES J
CORREIG X
CALDERER J
ALCUBILLA R
Citation: Lf. Marsal et al., ELECTRICAL MODEL FOR AMORPHOUS CRYSTALLINE HETEROJUNCTION SILICON DIODES (N-A-SI-H/P C-SI)/, Semiconductor science and technology, 11(8), 1996, pp. 1209-1213
Authors:
MARSAL LF
PALLARES J
CORREIG X
CALDERER J
ALCUBILLA R
Citation: Lf. Marsal et al., ELECTRICAL CHARACTERIZATION OF N-AMORPHOUS P-CRYSTALLINE SILICON HETEROJUNCTIONS/, Journal of applied physics, 79(11), 1996, pp. 8493-8497
Authors:
MARSAL LF
LOPEZVILLEGAS JM
BOSH J
MORANTE JR
Citation: Lf. Marsal et al., FREQUENCY-RESOLVED ADMITTANCE SPECTROSCOPY MEASUREMENTS ON IN0.52AL0.48AS INXGA1-XAS/IN0.52AL0.48AS SINGLE-QUANTUM-WELL STRUCTURES/, Journal of applied physics, 76(2), 1994, pp. 1077-1080
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