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Results:
1-17
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Results: 17
Authors:
VEVEFOSSATI C
MARTINUZZI S
Citation: C. Vevefossati et S. Martinuzzi, DETECTION AND CHARACTERIZATION OF STACKING-FAULTS BY LIGHT-BEAM INDUCED CURRENT MAPPING AND SCANNING INFRARED MICROSCOPY IN SILICON, EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 3(2), 1998, pp. 123-126
Authors:
MULLER JC
MARTINUZZI S
Citation: Jc. Muller et S. Martinuzzi, MULTICRYSTALLINE SILICON MATERIAL - EFFECTS OF CLASSICAL AND RAPID THERMAL-PROCESSES, Journal of materials research, 13(10), 1998, pp. 2721-2731
Authors:
BERTINI I
LUCHINAT C
MACINAI R
MARTINUZZI S
PIERATTELLI R
VIEZZOLI MS
Citation: I. Bertini et al., ISOLATION AND CHARACTERIZATION OF CYTOCHROME C(2) FROM RHODOPSEUDOMONAS-PALUSTRIS, Inorganica Chimica Acta, 269(1), 1998, pp. 125-134
Authors:
MCHUGO SA
THOMPSON AC
PERICHAUD I
MARTINUZZI S
Citation: Sa. Mchugo et al., DIRECT CORRELATION OF TRANSITION-METAL IMPURITIES AND MINORITY-CARRIER RECOMBINATION IN MULTICRYSTALLINE SILICON, Applied physics letters, 72(26), 1998, pp. 3482-3484
Authors:
MARTINUZZI S
PERICHAUD I
SIMON JJ
Citation: S. Martinuzzi et al., EXTERNAL GETTERING BY ALUMINUM-SILICON ALLOYING OBSERVED FROM CARRIERRECOMBINATION AT DISLOCATIONS IN FLOAT-ZONE SILICON-WAFERS, Applied physics letters, 70(20), 1997, pp. 2744-2746
Authors:
GAY N
MARTINUZZI S
Citation: N. Gay et S. Martinuzzi, EXTERNAL SELF-GETTERING OF NICKEL IN FLOAT-ZONE SILICON-WAFERS, Applied physics letters, 70(19), 1997, pp. 2568-2570
Authors:
STEMMER M
WAGNER G
MARTINUZZI S
Citation: M. Stemmer et al., LBIC CHARACTERIZATION OF LPE SI LAYERS DEPOSITED ON MULTICRYSTALLINE SI SUBSTRATES, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 153-156
Authors:
PERICHAUD I
SIMON JJ
MARTINUZZI S
Citation: I. Perichaud et al., LBIC INVESTIGATION OF IMPURITY-DISLOCATION INTERACTION IN FZ SILICON-WAFERS, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 265-269
Authors:
GAY N
FLORET F
MARTINUZZI S
ROUX L
ARNOULD J
MATHIEU G
Citation: N. Gay et al., EFFECTS OF ANNEALING IN OXYGEN AND NITROGEN ATMOSPHERE ON FZ SILICON-WAFERS, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 125-128
Authors:
VEVE C
STEMMER M
MARTINUZZI S
Citation: C. Veve et al., OXYGEN PRECIPITATES IN ANNEALED CZ SILICON-WAFERS DETECTED BY SIRM AND FTIR SPECTROSCOPY, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 200-203
Authors:
SIMON JJ
PERICHAUD I
BURLE N
PASQUINELLI M
MARTINUZZI S
Citation: Jj. Simon et al., INFLUENCE OF PHOSPHORUS DIFFUSION ON THE RECOMBINATION STRENGTH OF DISLOCATIONS IN FLOAT-ZONE SILICON-WAFERS, Journal of applied physics, 80(9), 1996, pp. 4921-4927
Authors:
PICHAUD B
MARTINUZZI S
Citation: B. Pichaud et S. Martinuzzi, EXTENDED DEFECTS IN SEMICONDUCTORS - FOREWORD, Journal de physique. III, 5(9), 1995, pp. 5-5
Authors:
MARTINUZZI S
PORRE O
PERICHAUD I
PASQUINELLI M
Citation: S. Martinuzzi et al., ALUMINUM GETTERING IN SILICON-WAFERS, Journal de physique. III, 5(9), 1995, pp. 1337-1343
Authors:
VEVE C
GAY N
STEMMER M
MARTINUZZI S
Citation: C. Veve et al., DETECTION AND CHARACTERIZATION OF PRECIPITATES IN ANNEALED CZ SILICON-WAFERS, Journal de physique. III, 5(9), 1995, pp. 1353-1363
Authors:
STEMMER M
VEVE C
GAY N
MARTINUZZI S
Citation: M. Stemmer et al., PRECIPITATE RECOGNITION AND RECOMBINATION STRENGTH IN ANNEALED CZOCHRALSKI SILICON-WAFERS, Materials science and technology, 11(7), 1995, pp. 703-706
Authors:
MARTINUZZI S
STEMMER M
Citation: S. Martinuzzi et M. Stemmer, MAPPING OF DEFECTS AND THEIR RECOMBINATION STRENGTH BY A LIGHT-BEAM-INDUCED CURRENT IN SILICON-WAFERS, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 152-158
Authors:
ELGHITANI H
PASQUINELLI M
MARTINUZZI S
Citation: H. Elghitani et al., INFLUENCE OF DISLOCATIONS ON PHOTOVOLTAIC PROPERTIES OF MULTICRYSTALLINE SILICON SOLAR-CELLS, Journal de physique. III, 3(10), 1993, pp. 1941-1946
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